Samsung Electronics Co., Ltd.

Jaeyoung Park

Bonyoung Koo

Sunyoung Lee

Taehyeon Kim

Kyungin Choi

Taegon Kim

Yuichiro Sasaki

Hongshik Shin

Jinbum Kim

Sungho Kang

Kichul Kim

Choeun Lee

Han Ki Lee

Seokhoon Kim

Sujin Jung

Young Su Heo

Donghun Lee

Yang Xu

Byeongchan Lee

Kwan Heum Lee

Hyunjae Kang

Hanki Lee

Jeongho Yoo

Kwanheum Lee

Kuihyun Yoon

Kanghun Moon

Wonguk Seo

Kyoungchon Kim

Jieon Yoon

Kyunlae Kim

Kyoungho Yang

A method of fabricating a semiconductor device includes pattering an upper portion of a substrate to form a first active pattern, the substrate including a semiconductor element having a first lattice constant, performing a selective epitaxial growth process on an upper portion of the first active pattern to form a first source/drain region, doping the first source/drain region with gallium, performing an annealing process on the first source/drain region doped with gallium, and forming a first contact pattern coupled to the first source/drain region. The first source/drain region includes a semiconductor element having a second lattice constant larger than the first lattice constant.

Method of fabricating semiconductor device

A method of manufacturing a semiconductor device includes forming a first plurality of recessed regions in a substrate, the substrate having a protruded active region between the first plurality of recessed regions and the protruded active region having an upper surface and a sidewall, forming a device isolation film in the first plurality of recessed regions, the device isolation film exposing the upper surface and an upper portion of the sidewall of the protruded active region, and performing a first plasma treatment on the exposed surface of the protruded active region, wherein the plasma treatment is performed using a plasma gas containing at least one of an inert gas and a hydrogen gas in a temperature of less than or equal to about 700&#xb0; C.

Method of manufacturing semiconductor device using surface treatment and semiconductor device manufactured by the method

Provided is an optical inspection system including a supporting unit, allowing a target object to be loaded thereon, a light source unit configured to emit a laser beam toward the target object, a light condensing unit collecting scattered light that is scattered at the target object when the laser beam is irradiated onto the target object, and a control unit controlling the light source unit and the light condensing unit and analyzing the scattered light to examine whether there are pollutants on the target object. The supporting unit may include a first supporting unit, on which the target object is disposed, and which is formed of a first material, and a second supporting unit, which is disposed under the first supporting unit and is formed of a second material different from the first material.

Optical inspection system

A method of fabricating a semiconductor device is provided as follows. A source/drain pattern is formed on a substrate. The source/drain pattern contains silicon atoms and germanium atoms. At least one germanium atom is removed from the germanium atoms of the source/drain pattern.

Semiconductor devices and methods of fabricating the same

A method of manufacturing a semiconductor device includes forming a first plurality of recessed regions in a substrate, the substrate having a protruded active region between the first plurality of recessed regions and the protruded active region having an upper surface and a sidewall, forming a device isolation film in the first plurality of recessed regions, the device isolation film exposing the upper surface and an upper portion of the sidewall of the protruded active region, and performing a first plasma treatment on the exposed surface of the protruded active region, wherein the plasma treatment is performed using a plasma gas containing at least one of an inert gas and a hydrogen gas in a temperature of less than or equal to about 700.

A semiconductor device may include a fin active region including a lower fin active region surrounded by a device isolation layer and an upper fin active region protruding from a top surface of the device isolation layer, a gate pattern disposed on top and side surfaces of the upper fin active region, and a source/drain region formed in the fin active region located at a side of the gate pattern. The gate pattern extends onto the device isolation region. The source/drain region includes a trench and epitaxial layers that fill the trench. Sidewalls of the trench include first sidewalls and second sidewalls that connect the first sidewalls to a bottom surface of the trench. The bottom surface of the trench is located at a lower level than the top surface of the device isolation layer beneath the gate pattern, and the second sidewalls of the trench have inclined {111} planes.

Semiconductor device having stressor and method of fabricating the same

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Yongin-si, South Korea

Jaeyoung Park