Rohm Co., Ltd.

Osaka University

Jaeyoung Kim

Toshikazu Mukai

Tomoichiro Toyama

Kazuisao Tsuruda

Masayuki Fujita

Hideaki Yanagida

Tadao Nagatsuma

Sebastian Diebold

A terahertz element of an aspect of the present disclosure includes a semiconductor substrate, first and second conductive layers, and an active element. The first and second conductive layers are on the substrate and mutually insulated. The active element is on the substrate and electrically connected to the first and second conductive layers. The first conductive layer includes a first antenna part extending along a first direction, a first capacitor part offset from the active element in a second direction as viewed in a thickness direction of the substrate, and a first conductive part connected to the first capacitor part. The second direction is perpendicular to the thickness direction and first direction. The second conductive layer includes a second capacitor part, stacked over and insulated from the first capacitor part. The substrate includes a part exposed from the first and second capacitor parts. The first conductive part has a portion spaced apart from the first antenna part in the second direction with the exposed part therebetween as viewed in the thickness direction.

Terahertz element and semiconductor device

A terahertz device includes a terahertz element, a sealing resin, a wiring layer and a frame-shaped member. The terahertz element that performs conversion between terahertz waves and electric energy. The terahertz element has an element front surface and an element back surface spaced apart from each other in a first direction. The sealing resin covers the terahertz element. The wiring layer is electrically connected to the terahertz element. A frame-shaped member is made of a conductive material and arranged around the terahertz element as viewed in the first direction. The frame-shaped member has a reflective surface capable of reflecting the terahertz waves.

Terahertz device and production method for terahertz device

One aspect of the present disclosure provides a terahertz-wave detector including a semiconductor substrate, an active element formed on the semiconductor substrate and a first resistive portion electrically connected in parallel with the active element.

Terahertz-wave detector and terahertz unit

A THz device includes: an antenna electrode capable of transmitting and receiving a THz wave to free space; first transmission lines capable of transmitting the THz wave, the first transmission lines respectively connected to the antenna electrodes; an active element of which a main electrode is connected to each of the first transmission lines; second transmission lines capable of transmitting the THz wave, the second transmission lines connected to the first active device; pad electrodes respectively connected to the second transmission lines; and a low-pass filter with respect to the THz wave, the low-pass filter connected to the pad electrodes, wherein impedance matching of between the antenna electrode and the active element is performed by an impedance conversion of the first transmission lines. The THz device is capable of the high-efficiency matching between the active element and the antenna due to the impedance conversion effect of the transmission line.

Growing community of inventors

Kyoto, Japan

Jaeyoung Kim