Samsung Electronics Co., Ltd.

Pohang University of Science and Technology Foundation

Jaeyoon Sim

Jaeho Lee

Hyunsoo Kim

Sangjoon Kim

Jaehan Park

Kyeongjun Lee

Hyunwoo Son

A method and apparatus for performing anomaly detection by using a neural network are provided. The apparatus is configured to extract input features of an input data signal, obtain output features of the neural network by processing the input features through the neural network, obtain an error based on the input features and the output features, and determine whether the input data signal indicates an abnormal signal based on the error and a threshold.

Method and apparatus for performing anomaly detection using neural network

A resistive memory device includes a memory cell array in which a plurality of memory cells are arranged. Each of the plurality of memory cells includes a variable resistor comprising a first end connected to a bit line, and a second end, a row transistor connected between a row source line and the second end of the variable resistor, the row transistor being selectable by a row word line, and a column transistor connected between a column source line and the second end of the variable resistor, the column transistor being selectable by a column word line. Based on the row transistor being selected, first data is written or second data is read in a row direction of the memory cell array, and based on the column transistor being selected, the first data is written or the second data is read in a column direction of the memory cell array.

Resistive memory device having memory cell array and system including the same

Growing community of inventors

Pohang-si, South Korea

Jaeyoon Sim