Lg Display Co., Ltd.

Lg Electronics Inc.

Yonsei University

Jaeyeong Choi

Kwangseok Noh

Dongkyu Kim

Daesik Hong

ChongHun Park

MiKyung Park

Kisul Cho

Haesoon Lee

A method by which a first network node cancels a self-interference signal when operating in a full duplex radio (FDR) mode in a wireless network can comprise the steps of: cancelling a self-interference signal on the basis of frequency synchronization estimation of the self-interference signal when frequencies of a reception signal received from a second network node and the self-interference signal are asynchronous; and estimating frequency synchronization of the reception signal by using a residual signal according to the cancellation of the self-interference signal, and detecting the reception signal on the basis of the frequency synchronization estimation of the reception signal.

Method for cancelling self-interference signal when operating in FDR mode, and device therefor

There are provided a display panel and a display device including the same. In the display panel and display device including the same, in a structure in which an insulating layer having a depression point is provided between different conductive layers, another insulating layer may be disposed to cover the depression point. Accordingly, an occurrence of a short circuit may be minimized between the different conductive layers.

Display panel and display device including the same

A thin film transistor and a method for fabricating the same are disclosed. The thin film transistor includes: a gate electrode formed on a substrate and having a plurality of horizontal electrode parts spaced apart at regular intervals; a gate insulating film formed over the entire surface of the substrate including the gate electrode; an active pattern formed on the gate insulating film above the plurality of horizontal electrode parts; an etch stop film pattern formed above the active pattern and the gate insulating film so as to overlap top portions of the active pattern and the gate electrode and; a source electrode formed on the active pattern, the gate insulating film, and the etch stop film pattern so as to overlap top portions of adjacent horizontal electrode parts; and a drain electrode formed on the active pattern, the gate insulating film, and the etch stop film pattern so as to overlap top portions of horizontal electrode parts located on the outermost ends.

Thin film transistor and method for fabricating the same

Growing community of inventors

Seoul, South Korea

Jaeyeong Choi