Samsung Electronics Co., Ltd.

Jaewan Chang

Suhwan Kim

Hyunjun Kim

Seongyul Park

Wandon Kim

Younsoo Kim

Jaehyoung Choi

Sunmin Moon

Kyuho Cho

Ohseong Kwon

Beomseok Kim

A capacitor structure may include a lower electrode on a substrate, a dielectric layer on the substrate, and an upper electrode on the dielectric layer. The lower electrode may include a metal nitride having a chemical formula of MN(Mis a first metal, and y is a positive real number). The dielectric layer may include a metal oxide and nitrogen (N), the metal oxide having a chemical formula of MO(Mis a second metal, and x is a positive real number). A maximum value of a detection amount of nitrogen (N) in the dielectric layer may be greater than a maximum value of a detection amount of nitrogen (N) in the lower electrode.

Capacitor structure, method of forming the same, semiconductor device including the capacitor structure and method of manufacturing the same

A semiconductor device comprises a capacitor that includes a first electrode, a second electrode, and a dielectric layer between the first electrode and the second electrode. The dielectric layer comprises a first high-k dielectric layer between the first electrode and the second electrode, a first silicon oxide layer between the first high-k dielectric layer and the second electrode, and a first aluminum oxide layer between the first high-k dielectric layer and the second electrode.

Semiconductor device including capacitor

The present inventive concept provides semiconductor devices that may include a capacitor including a lower electrode, a dielectric layer, and an upper electrode which are sequentially stacked. An electrode-protecting layer may be provided on the capacitor. The upper electrode may include a conductive metal oxide and the electrode-protecting layer may include a sacrificial reaction layer including a metal-hydrogen compound.

Semiconductor devices

Growing community of inventors

Seoul, South Korea

Jaewan Chang