Samsung Electronics Co., Ltd.

Jaeung Koo

Boun Yoon

Ilyoung Yoon

Kwansung Kim

Youncheol Jeong

Seungjae Lee

Wandon Kim

Seung Hoon Choi

Bo Yun Kim

Jeonghyuk Yim

Jooho Jung

Kangchun Lee

Yeryung Jeon

Joongsuk Oh

Huiteak Hong

Junhwan Yim

Sukbae Joo

A semiconductor device includes an active region extending in a first direction on a substrate, a plurality of channel layers vertically spaced apart from each other on the active region, a gate structure vertically overlapping the active region and the plurality of channel layers on the substrate, extending in a second direction, and including a gate electrode surrounding the plurality of channel layers and a gate capping layer disposed on an upper surface of the gate electrode, a first source/drain region disposed on a side of the gate structure on the active region and in contact with the plurality of channel layers, an isolation structure intersecting the active region on the substrate, extending in the second direction, and disposed between the first source/drain region and a second source/drain region adjacent to each other, and contact structures in contact with the source/drain regions.

Semiconductor device having an isolation structure between adjacent source/drain regions

A semiconductor device manufacturing method is capable of manufacturing a semiconductor device with improved reliability, by simplifying a chemical mechanical polishing (CMP) process and minimizing a thickness distribution of a dummy gate during the CMP process. The semiconductor device manufacturing method includes forming, on a substrate, dummy gate structures extending in a first direction and spaced apart from each other in a second direction perpendicular to the first direction, each dummy gate structure including a dummy gate and a mask pattern on an upper surface of the dummy gate; forming an interlayer insulating layer covering the dummy gate structures; and performing the single slurry CMP process of removing some of the interlayer insulating layer and the dummy gate structures through the single slurry CMP process and exposing the upper surface of the dummy gate.

Method of manufacturing semiconductor device using single slurry chemical mechanical polishing (CMP) process

A semiconductor device may include a substrate including an active pattern extending in a first direction, a gate electrode extending in a second direction and crossing the active pattern, a gate capping pattern covering a top surface of the gate electrode, and a separation structure at a side of the gate electrode and extending in the second direction to penetrate the active pattern in a third direction. The first and second directions are parallel to a bottom surface of the substrate and are perpendicular to the third direction. The separation structure may include a filling pattern, which extends in the third direction to penetrate the active pattern, and a vertical insulating pattern, which is interposed between the filling pattern and the gate electrode. A top surface of the separation structure may be located at a height lower than a top surface of the gate capping pattern.

Semiconductor device

A semiconductor device and a method of fabricating a semiconductor device, the semiconductor device including a semiconductor substrate including a first region and a second region; an interlayer insulating layer on the semiconductor substrate, the interlayer insulating layer including a first opening on the first region and having a first width; and a second opening on the second region and having a second width, the second width being greater than the first width; at least one first metal pattern filling the first opening; a second metal pattern in the second opening; and a filling pattern on the second metal pattern in the second opening, wherein the at least one first metal pattern and the second metal pattern each include a same first metal material, and the filling pattern is formed of a non-metal material.

Semiconductor device including interconnections having different structures and method of fabricating the same

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Yongin-si, South Korea

Jaeung Koo