Lg Display Co., Ltd.

Lg Philips Lcd Co., Inc.

Lg Electronics Inc.

Jaesung You

Hyun Sik Seo

Yun Ho Jung

Young Dug Kim

Juwan Kang

Young Joo Kim

Disclosed are a photovoltaic module and a photovoltaic system including the same. The photovoltaic module includes a solar cell module, a converter to convert a DC voltage from the solar cell module, an inverter to convert the DC voltage from the converter into an AC voltage, and a plug to outwardly output the AC voltage from the inverter, the plug having a ground terminal. The ground terminal is electrically connected to a ground of the inverter, and the ground of the inverter is electrically connected to a ground of the solar cell module. Thereby, the AC voltage from the photovoltaic module is directly supplied to an outlet inside or outside a building.

Photovoltaic module and photovoltaic system including the same

The present invention relates to a power supply device and a power supply system including the same. The power supply device includes a first connector to receive an input alternating current (AC) voltage, a second connector to output a first output AC voltage to a grid, a third connector connectable with a plug of an external electronic device, a voltage conversion unit to convert a first direct current (DC) voltage stored in a battery into an AC voltage, and a controller configured to control the first output AC voltage based on the input AC voltage not to be supplied to the grid when grid power outage occurs while the first AC voltage is output to the grid, and control the input AC voltage to be output to the third connector as a second output AC voltage, or control the input AC voltage to be converted into the first DC voltage and the first DC voltage to be supplied to the battery. Thereby, the input AC voltage generated by the solar module may be utilized when grid power outage occurs.

Power supply device and power supply system including the same

A solar cell includes a substrate of a first conductive type; an emitter layer that is positioned on the substrate and is a second conductive type that is opposite to the first conductive type; first electrodes that are connected to the emitter layer; and a second electrode that is connected to the substrate, wherein the emitter layer includes a first emitter portion and a second emitter portion, the first electrodes include a finger electrode, and a bus electrode intersecting and connected to the finger electrode, and the first emitter portion and the second emitter portion are positioned under the bus electrode.

Solar cell, method of forming emitter layer of solar cell, and method of manufacturing solar cell

A crystallization method includes providing a substrate having a silicon thin film; positioning a laser mask having first to fourth blocks on the substrate, each block having a periodic pattern including a plurality of transmitting regions and a blocking region; and crystallizing the silicon thin film by irradiating a laser beam through the laser mask. A polycrystalline silicon film crystallized by this method is substantially free from a shot mark, and has uniform crystalline characteristics.

Laser mask and crystallization method using the same

A method for forming emitter layer of a solar cell includes preparing a substrate including a first impurity of a first conductive type, diffusing a second impurity of a second conductive type opposite to the first conductive type in the substrate to form a first emitter portion of the emitter layer in the substrate, and selectively heating a portion of the first emitter portion, which corresponds to a position for forming at least one electrode, to form a second emitter portion.

A method of crystallizing silicon including preparing a substrate having an amorphous silicon film formed thereon, aligning a mask having a first energy region and a second energy region over a first region of the amorphous silicon film formed on the substrate, irradiating a laser beam through the first and second energy regions of the mask onto the first region of the amorphous silicon film, crystallizing the first region of the amorphous silicon film by irradiating the laser beam through the first energy region of the mask, and activating the crystallized first region by irradiating the laser beam through the second energy region.

Method of crystallizing silicon

A crystallization method, includes: forming an amorphous silicon layer on a substrate; forming a first crystallization region by irradiating the amorphous silicon layer with a laser beam having a ramp shaped cross sectional profile that decreases in a scanning direction; and performing a second crystallization by moving a predetermined length in a scanning direction so as to be partially overlapped with the first crystallization region formed by the first crystallization.

Method for crystallizing silicon using a ramp shaped laser beam

An embodiment of a laser crystallization method includes providing a substrate on which an amorphous silicon thin film is deposited, positioning a laser mask over the substrate, the laser mask including a mask pattern that contains transmitting regions and a blocking region, irradiating a first laser beam onto a surface of the substrate through the pattern of the laser mask to first crystallize a predetermined region of the silicon thin film, moving the laser mask or a stage on which the substrate is loaded in an X-axis direction to perform second crystallization using the laser mask, repeatedly performing the crystallization to an end of the substrate in the X-axis direction, moving the laser mask or the stage in a Y-axis direction, and repeatedly performing the crystallization in the Y-axis direction to complete crystallization.

Provided is a method for crystallizing using a laser mask for selectively crystallizing active regions without a laser shot mark, including: providing an array substrate in which N&#xd7;M active regions are defined; positioning a laser mask having first and second blocks over the substrate, wherein the first and second blocks have first and second mask patterns, respectively, and the second mask pattern is a reverse pattern of the first mask pattern; irradiating a first laser beam onto the active regions through the first block; and irradiating a second laser beam onto the active regions through the second block.

Laser mask and method of crystallization using the same

A crystallization method and system are provided which improve a crystallization process by deciding a best-fit focal plane for a laser beam using a test mask and then applying the decided best-fit focal plane to the crystallization process. The crystallization method includes loading a test mask on a mask stage; deciding a best-fit focal plane by performing a crystallization test using the test mask, checking the test result and deciding conditions of a best-fit focal plane from the test result; moving the mask stage to a position corresponding to the best-fit focal plane; loading a mask for crystallization process onto the moved mask stage; and performing the crystallization process using the mask for crystallization process.

Method of deciding focal plane and method of crystallization using thereof

A laser mask includes a mask pattern with edges having inverted shapes to alleviate the effects of diffraction of laser beams to reduce overlap regions such that crystallization characteristics are improved. The laser mask includes a mask pattern that includes transmitting regions and a blocking region. The edges of the mask have shapes inverted to the shapes of the edges of a silicon thin film crystallized by the pattern.

A method of crystallizing an amorphous silicon thin film on a substrate includes loading a substrate onto a stage, the substrate having an amorphous silicon thin film thereon and having first and second regions, performing a first crystallization by irradiating a laser beam on the first region of the amorphous silicon thin film, the first region being crystallized by moving the stage by a first distance, and performing a second crystallization by irradiating the laser beam on the second region, the second region being crystallized by moving the stage by a second distance.

Crystallization method and apparatus thereof

A method of forming a polycrystalline semiconductor layer includes forming a semiconductor layer of amorphous silicon on a substrate, forming a plurality of spot seeds in the semiconductor layer by irradiating a first laser beam through a crystallization mask, each of the plurality of spot seeds being equally spaced from one another and each having equal area, and forming a polycrystalline silicon layer along an entire surface of the substrate by irradiating a second laser beam onto the semiconductor layer.

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Seoul, South Korea

Jaesung You