Soulbrain Co., Ltd.

Jaesun Jung

Changbong Yeon

Taeho Song

Hyeran Byun

Seokjong Lee

Sojung Kim

The present invention relates to a method for forming a thin film, and more particularly, to a method for forming a thin film comprising steps of: According to the present invention, it is possible to suppress side reactions to appropriately lower a thin film growth rate and remove process byproducts in the thin film, thereby preventing corrosion or deterioration and greatly improving step coverage and thickness uniformity of a thin film, even when the thin film is formed on a substrate having a complex structure.

Method for forming thin film

Disclosed are a growth inhibitor for forming a thin film, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom. The growth inhibitor for forming a thin film is represented by Chemical Formula 1: AnBmXo [Chemical Formula 1]. A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer from 1 to 15, o is an integer of 1 or more, and m is from 0 to 2n+1. It is possible to suppress side reactions to appropriately lower a thin film growth rate and remove process byproducts in the thin film, thereby preventing corrosion or deterioration and greatly improving step coverage and thickness uniformity of a thin film even when the thin film is formed on a substrate having a complicated structure.

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Seongnam-si, South Korea

Jaesun Jung