Samsung Electronics Co., Ltd.

Jaesuk Kim

Sangwook Park

Dongho Shin

Dongyun Yeo

Youngeun Kim

Minji Park

Daehyun Lee

Chunghun Lee

Kyoung-mi Choi

Youngil Kang

Disclosed is a plasma processing apparatus comprising a plasma electrode, an electrostatic chuck, and a diode board. The electrostatic chuck includes a microheater layer and a chuck electrode. The microheater layer includes an inner heater part and an outer heater part. The inner heater part includes a first inner heater in a first inner region that circumferentially surrounds a center of the microheater layer, and a second inner heater in a second inner region that circumferentially surrounds the first inner region. The outer heater part includes a first outer heater in a first outer region that circumferentially surrounds the second inner region, and a second outer heater in a second outer region that circumferentially surrounds the first outer region. A distance between centers of the first and second outer heaters is less than that between centers of the first and second inner heaters.

Plasma processing apparatus and semiconductor fabrication method using the same

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Hwaseong-si, South Korea

Jaesuk Kim