Samsung Electronics Co., Ltd.

Adeka Corporation

Jaesoon Lim

Younjoung Cho

Soyoung Lee

Akio Saito

Gyu-Hee Park

Jaehyoung Choi

Jungmin Park

Younsoo Kim

Takanori Koide

Seung-min Ryu

Yutaro Aoki

Cheoljin Cho

Masayuki Kimura

Atsushi Yamashita

Tsubasa Shiratori

Kyuho Cho

Masashi Shirai

Seungmin Ryu

Kazuki Harano

Gyuhee Park

Hiroshi Nihei

Yoshiki Manabe

Wakana Fuse

Kouhei Sugimoto

Yousuke Satou

Jieun Yun

Yangsun Park

Takamasa Miyazaki

A capacitor and a DRAM device, the capacitor including a lower electrode; a dielectric layer structure on the lower electrode, the dielectric layer structure including a first zirconium oxide layer, a hafnium oxide layer, and a second zirconium oxide layer sequentially stacked; and an upper electrode on the dielectric layer structure, wherein the hafnium oxide layer has a tetragonal crystal phase or an orthorhombic crystal phase.

Capacitor and memory device

A method of selectively forming a cobalt metal layer includes supplying a cobalt compound represented by Chemical Formula (1) onto a substrate that includes a wiring line of a late transition metal and an isolation film adjacent thereto, and supplying a reducing gas to selectively form a cobalt metal layer on the wiring line,

Method of selectively forming cobalt metal layer by using cobalt compound, and method of fabricating semiconductor device by using cobalt compound

Capacitor and DRAM device including the same

Described herein are metal compounds and methods of fabricating semiconductor devices using the same. The metal compounds include a material of Chemical Formula 1. 

Metal compounds and methods of fabricating semiconductor devices using the same

A niobium compound and a method of forming a thin film using the niobium compound, the compound being represented by the following General formula I: 

Niobium compound and method of forming thin film

Provided are an aluminum compound and a method for manufacturing a semiconductor device using the same. The aluminum compound may be represented by Formula 1. 

Aluminum compound and method for manufacturing semiconductor device using the same

The inventive concept relates to a cobalt precursor, a method for manufacturing a cobalt-containing layer using the same, and a method for manufacturing a semiconductor device using the same. More particularly, the cobalt precursor of the inventive concept includes at least one compound selected from the group consisting of a compound of Formula 1 and a compound of Formula 2.

Cobalt precursor and methods for manufacture using the same

A method of manufacturing a semiconductor device, the method including providing a metal precursor on a substrate to form a preliminary layer that includes a first metal; providing a reducing agent on the preliminary layer, the reducing agent including a compound that includes a second metal; and providing a reactant on the preliminary layer to form a metal-containing layer, wherein the second metal has multiple oxidation states, the second metal in the reducing agent having a lower oxidation state among the multiple oxidation states prior to providing the reducing agent on the preliminary layer.

Method of manufacturing semiconductor device

Disclosed is a tungsten precursor and a method of forming a tungsten-containing layer. The tungsten precursor has a structure represented by Formula 1 below.  In Formula 1, R, R, and Rindependently include a straight-chained or a branched alkyl group including a substituted or an unsubstituted C1-C5; Rand Rindependently include a straight-chained or a branched alkyl group including a C1-C5, halogen element, dialkylamino group having C2-C10, or trialkylsilyl group including a C3-C12; n is 1 or 2, and m is 0 or 1. Also, n+m=2 (e.g., when n is 1, m is 1). When n is 2, m is 0 and each of Rand Rare provided in two. Two Rs are independently of each other, and two Rs are independently of each other.

Tungsten precursor and method of forming Tungsten containing layer using the same

A method of fabricating a semiconductor device, the method including forming semiconductor patterns on a substrate such that the semiconductor patterns are vertically spaced apart from each other; and forming a metal work function pattern to fill a space between the semiconductor patterns, wherein forming the metal work function pattern includes performing an atomic layer deposition (ALD) process to form an alloy layer, and the ALD process includes providing a first precursor containing an organoaluminum compound on the substrate, and providing a second precursor containing a vanadium-halogen compound on the substrate.

Method of fabricating semiconductor device

A semiconductor device includes a substrate and a doped hafnium oxide layer disposed on the substrate, the doped hafnium oxide layer including a hafnium oxide layer doped with doping atoms and having tetragonal unit lattices, an ion size of the doping atom being greater than an ion size of a hafnium atom.

Semiconductor devices including a dielectric layer

Growing community of inventors

Seoul, South Korea

Jaesoon Lim