Samsung Electronics Co., Ltd.

Jaeseong Lim

Daehyun Kim

Kyungryun Kim

Minho Choi

Hyongryol Hwang

Hohyun Shin

Sanghoon Jung

Wonil Bae

Seungki Hong

Minsoo Jang

Jinsol Park

Eunki Hong

A method of operating a memory device includes precharging a pair of true and complementary bit lines (BL/BLB) to an equivalent voltage concurrently with precharging a pair of true and complementary sense bit lines (SABL/SABLB) to the equivalent voltage, and then transferring charge associated with offset noise from BL to SABLB concurrently with transferring charge associated with the offset noise from BLB to SABL, so that a voltage difference is established between the SABL and SABLB. Next, a logic state of a memory cell connected to BI is read by transferring charge between the memory cell and BL, concurrently with equilibrating voltages on SABL and SABLB. Then, a voltage difference between SABL and SABLB is sensed and amplified in response to activating an amplifier circuit within the sense amplifier.

Memory devices having sense amplifiers therein that support offset cancellation having improved sense amplifier characteristics and methods of operating same

A voltage trimming circuit including: a first resistance circuit having a first resistance value determined by up codes and down codes; a second resistance circuit having a second resistance value determined by the up codes and the down codes; and a comparator to output a voltage detection signal by comparing a voltage level of a reference voltage trimming node to that of a feedback node, wherein the voltage detection signal adjusts the up and down codes, which increase the first resistance value and decrease the second resistance value when the voltage level of the reference voltage trimming node is higher than that of the feedback node, and adjusts the up and down codes, which decrease the first resistance value and increase the second resistance value when the voltage level of the reference voltage trimming node is lower than that of the feedback node.

Voltage trimming circuit

Growing community of inventors

Cheongju-si, South Korea

Jaeseong Lim