Samsung Electronics Co., Ltd.

Jaephil Shim

Myunghee Kim

Jenghun Suh

Jihoon Kang

Jitsuo Ota

Sungwook Kim

Donghwan Kim

Jinhee Kang

Yong Namkung

A display module and a manufacturing method thereof are provided. The manufacturing method may include forming an epitaxial film comprising a light emitting layer, a first type semiconductor layer, and a second type semiconductor layer, attaching the epitaxial film to an intermediate substrate comprising a conductive material, patterning the epitaxial film to form a light emitting diode (LED) and coupling the LED to a driving circuit layer through the conductive material.

Display module and manufacturing method thereof

A display panel including an LED device and a method including: forming a plurality of light emitting diodes (LEDs); and forming a plurality of partition walls that divide light-emitting regions by each of the plurality of LEDs, wherein the forming the plurality of LEDs includes: etching a growth substrate to form a plurality of LEDs and forming a plurality of protrusions and a plurality of depressions on the growth substrate; and forming a reflector layer on a surface of the plurality of protrusions and a surface of the plurality of depressions, and wherein the forming the plurality of partition walls includes removing a part of the growth substrate so that the plurality of partition walls are formed based on the plurality of protrusions, and a space between the plurality of partition walls is formed based on the plurality of depressions.

LED display module, manufacturing method for LED display module and display device including LED display module

An LED device includes: a first semiconductor layer of a first type; a second semiconductor layer of a second type; a light emitting layer formed between the first semiconductor layer and the second semiconductor layer and configured to emit light; and a filter formed on the second semiconductor layer and configured to transmit light in the second wavelength band within the first wavelength band. The filter includes a defect layer, first refractive layers, and second refractive layers having a refractive index greater than a refractive index of the first refractive layers, the first refractive layers and the second refractive layers are formed alternately on one side and other side of the defect layer. A thickness of the defect layer is determined based on a center wavelength of the first wavelength band, a peak wavelength of the second wavelength band and a refractive index of the defect layer.

Light emitting diode device having multilayer filter for improving color characteristic of light

A flip-chip light emitting diode (LED), a display device including at least one flip-chip LED, and a method of manufacturing the LED. The flip-chip LED including a light-emitting layer; an n-type semiconductor layer laminated on a lower part of the light-emitting layer; a p-type semiconductor layer laminated on an upper part of the light-emitting layer; a first electrode that is electrically connected to the n-type semiconductor layer via a first contact hole formed in the LED; a second electrode that is electrically connected to the p-type semiconductor layer, and is electrically insulated from the first electrode; a metal layer provided in a first area, a second area, and a third area; a third electrode that is formed on the metal layer in the third area, is electrically connected to the metal layer, and is electrically insulated from the first electrode and the second electrode; and a plurality of insulating layers.

Growing community of inventors

Suwon-si, South Korea

Jaephil Shim