Boe Technology Group Co., Ltd.

Chongqing Boe Optoelectronics Technology Co., Ltd.

Hefei Xinsheng Optoelectronics Technology Co., Ltd.

Chongqing Boe Optoelectronics Co., Ltd.

Jaemoon Chung

Dongseob Kim

Qiuping Huang

Jianshe Xue

Zhengwei Chen

Shikai Wang

Jaeyun Jung

Dengtao Li

Chao Fan

Niannian Wang

Daeyoung Choi

Hongwei Du

Jun Geng

Xinghua Cui

Seong Sil Im

Chao-Huan Hsu

Huawei Xu

Inchul Choi

Dongzhen Jin

Rongge Cui

Shiwei Lv

An array substrate, a method for manufacturing the array substrate and a display device are provided. The array substrate includes a substrate, an organic film layer and a passivation layer; the organic film layer is arranged between the substrate and the passivation layer; a venting hole is formed in the passivation layer.

Array substrate, method for manufacturing the same and display device

The present application discloses a thin film transistor including a base substrate; an active layer on the base substrate having a first semiconductor region, a second semiconductor region, and a plurality of semiconductor bridges each of which connecting the first semiconductor region and the second semiconductor region; the plurality of semiconductor bridges spaced apart from each other; the active layer being made of a material including M1ON, wherein M1 is a single metal or a combination of metals, a&#x3e;0, and b&#x2265;0; an etch stop layer on a side of the active layer distal to the base substrate; the first semiconductor region having a first non-overlapping portion, a projection of which is outside that of the etch stop layer in plan view of the base substrate; the second semiconductor region having a second non-overlapping portion, a projection of which is outside that of the etch stop layer in plan view of the base substrate; a first electrode on a side of the first non-overlapping portion distal to the base substrate; and a second electrode on a side of the second non-overlapping portion distal to the base substrate.

Thin film transistor, gate drive on array and display apparatus having the same, and fabricating method thereof

The present invention provides an array substrate, a method for manufacturing the same and a display device, and relates to technical field of displays. The method for manufacturing an array substrate comprises forming a metal layer on a substrate and removing superficial metallic oxide on the metal layer by a washing process. The method for manufacturing an array substrate according to the present inversion can remove the superficial metal oxide on the metal layer and improve the performance of a TFT.

Embodiments of the invention provide a conductive structure, a thin film transistor, an array substrate, and a display device. The conductive structure comprises a copper layer formed of copper or copper alloy; a blocking layer for preventing copper ions of the copper layer from diffusing outward; and a diffusion prevention layer for preventing exterior ions from diffusing to the copper layer and disposed between the copper layer and the blocking layer. The multilayer conductive structure according to an embodiment of the invention can prevent exterior ions from diffusing into a copper layer and prevent copper ions from diffusing outward to reduce ions diffusion that adversely impacts the electricity performance and chemical corrosion resistance of the copper metal layer, and meanwhile can enhance adhesiveness of the conductive structure, which may be helpful for etching/patterning of the multilayer conductive structure.

Thin film transistor array substrate and a thin film transistor which comprise a conductive structure comprising a blocking layer and a diffusion prevention layer

A thin film transistor (TFT) according to the present disclosure may include an active layer, an etch stop layer (ESL), a source electrode and a drain electrode. The active layer may include at least one first active portion, a second active portion and a third active portion located on both sides of the first active portion and connected to the first active portion. The at least one first active portion may be overlaid by the ESL, and a longitudinal width of the at least one first active portion may be less than those/that of the second active portion and/or the third active portion. The second active portion and the third active portion may be overlaid by a horizontally-extending portion of the ESL on the first active portion. A side wing contact may be formed between the second active portion and one electrode of the source electrode and the drain electrode, and/or a side wing contact may be formed between the third active portion and the other electrode of the source electrode and the drain electrode.

Thin film transistor, method for manufacturing the same, display device and electronic product

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Beijing, China

Jaemoon Chung