Lg Electronics Inc.

Jaemoo Kim

Hojung Lee

Seung Yup Jang

Junho Kim

Seongmoo Cho

Taehoon Jang

Eujin Hwang

The present disclosure can be applied to semiconductor devices and, in particular, relates to a MOSFET device made of silicon carbide and a method for manufacturing same. A metal-oxide film semiconductor field-effect transistor device of the present disclosure may comprise: a drain electrode; a substrate arranged on the drain electrode; an N-type drift layer arranged on the substrate; a current-spreading layer arranged on the drift layer; P-type well layers arranged on the current-spreading layer to define a channel; an N+ region arranged on the well layers; a damage prevention layer adjacent to the N+ region and having a lower N-type doping concentration than that of the N+ region; a P+ region arranged on one side of the channel; a gate oxide layer arranged on the current-spreading layer; a gate layer arranged on the gate oxide layer; and a source electrode arranged on the gate layer.

Metal-oxide film semiconductor field-effect transistor device and method for manufacturing same

The present disclosure relates to: a MOSFET device which is applicable to a semiconductor device and, particularly, is manufactured using silicon carbide; and a manufacturing method therefor. The present disclosure provides a metal-oxide-semiconductor field effect transistor device which may comprise: a drain electrode; a substrate disposed on the drain electrode; an N-type drift layer disposed on the substrate; a plurality of P-type well layer regions disposed on the drift layer and spaced apart from each other to define a channel; an N+ region disposed on the well layer regions and adjacent to the channel; a P+ region disposed at the other side of the channel; a gate oxide layer disposed on the drift layer; a gate layer disposed on the gate oxide layer; and a source electrode disposed on the gate layer.

Metal-oxide semiconductor field effect transistor device and manufacturing method therefor

A nitride semiconductor power device includes an AlGaN multilayer, which has changeable Al composition along a depositing direction, and SiNy layer, so as to minimize an increase in a leakage current and a decrease in a breakdown voltage, which are caused while fabricating a heterojunction type HFET device. A semiconductor device includes a buffer layer, an AlGaN multilayer formed on the buffer layer, a GaN channel layer formed on the AlGaN multilayer, and an AlGaN barrier layer formed on the AlGaN multilayer, wherein aluminum (Al) composition of the AlGaN multilayer changes along a direction that the AlGaN multilayer is deposited.

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Seoul, South Korea

Jaemoo Kim