Samsung Electronics Co., Ltd.

Korea Advanced Institute of Science and Technology

Jaekwan Kim

Changseung Lee

Jeongyub Lee

Yongsung Kim

Byonggwon Song

Kiyeon Yang

Jangwoo You

Jonghwa Shin

Narae Han

Reehyang Kim

Seunghoon Han

Chan Kwak

Byunghoon Na

Jooho Lee

Choongho Rhee

Yongseop Yoon

Sanghoon Song

Chanwook Baik

Jinmyoung Kim

Changwon Lee

Jinyoung Hwang

Byungkyu Lee

Heejeong Jeong

Eunhyoung Cho

Inyong Song

Gil Won Yoon

Hwayeal Yu

Gwangyol Noh

Provided are a long-wave infrared sensor and an electronic device including the same. The long-wave infrared sensor and the electronic device including the same include a pixel array including a plurality of pixels, an optical absorber layer arranged on the pixel array, and a drive circuit configured to drive the pixel array, wherein each of the plurality of pixels for a long-wave infrared sensor includes a lower electrode and an upper electrode which are arranged apart from each other, and a plurality of magnetic tunnel junction devices arranged regularly between the lower electrode and the upper electrode and electrically connected to each other in parallel, and the plurality of magnetic tunnel junction devices are arranged apart from each other with an empty space therebetween.

Long-wave infrared sensor and electronic device including the same

A switching regulator may include; an inductor connected to a switch node, a power switch connected to the switch node and configured to apply a first voltage to the switch node in response to a first control signal and to apply a second voltage to the switch node in response to a second control signal, and a controller configured to generate the first control signal and the second control signal. The second control signal transitions from low to high following a first dead time after the first control signal transitions from low to high, the first control signal transitions from high to low following a second dead time after the second control signal transitions from high to low level, and an inductor current flowing through the inductor flows in a first direction during the first dead time and in a second direction, different from the first direction, during the second dead time.

Switching regulator and power management integrated circuit

Provided are a multilayer thin-film structure and a phase shifting device using the same. The multilayer thin-film structure includes at least one crystallization preventing layer and at least one dielectric layer that are alternately stacked. The at least one crystallization preventing layer includes an amorphous material, and a thickness of the at least one crystallization preventing layer is less than a thickness of the at least one dielectric layer.

Multilayer thin-film structure and phase shifting device using the same

Provided are meta-surface optical device and methods of manufacturing the same. The meta-surface optical device may include a meta-surface arranged on a region of a substrate and a light control member arranged around the meta-surface. The light control member may be arranged on or below the substrate. A material layer formed of the same material used to form the meta-surface may be disposed between the light control member and the substrate. Also, the meta-surface may be a first meta-surface arranged on an upper surface of the substrate, and a second meta-surface may be arranged on a bottom surface of the substrate. Also, the meta-surface may include a first meta-surface and at least one second meta-surface may formed on the first meta-surface, and the light control member may be arranged around the at least one second meta-surface.

Meta-surface optical element and method of manufacturing the same

A phase shifting device may include a plurality of metal layers and a plurality of first dielectric layers, a metal layer of the plurality of metal layers and a first dielectric layer of the plurality of first dielectric layers being alternately stacked in a first direction, and a second dielectric layer disposed on a side surface of the stacked structure in a second direction, wherein the first dielectric layer includes a first material having a first dielectric constant and the second dielectric layer includes a second material having a second dielectric constant, and wherein the second dielectric constant is greater than the first dielectric constant.

Phase shift device including metal-dielectric composite structure

Provided in a phase shifting device including a plurality of metal layers and a plurality of first dielectric layers, a metal layer of the plurality of metal layers and a first dielectric layer of the plurality of first dielectric layers being alternately stacked in a first direction, and a second dielectric layer disposed on a side surface of the stacked structure in a second direction, wherein the first dielectric layer includes a first material having a first dielectric constant and the second dielectric layer includes a second material having a second dielectric constant, and wherein the second dielectric constant is greater than the first dielectric constant.

A meta-optical device and a method of manufacturing the same are provided. The method includes depositing a group III-V compound semiconductor on a substrate, forming an anti-oxidation layer, performing crystallization by using post annealing, removing the anti-oxidation layer, and manufacturing a meta-optical device by using patterning.

Meta-optical device and method of manufacturing the same

A method of designing a meta optical device is provided. The method includes: setting, via a processor, design data for arrangement and dimensions of a nanostructure of the meta optical device, according to a function to be implemented by the meta optical device; obtaining a phase change graph with respect to a change in the dimensions; setting a shape dimension region with phase defect in the phase change graph; and substituting a shape dimension with phase defect, which is included in the shape dimension region with phase defect among the dimensions included in the design data, with a substitution value that is outside the shape dimension region with phase defect. Accordingly, a meta optical device having no phase defect is implemented.

Meta optical device and method of designing the same

Example embodiments relate to a nanostructure including a conductive region and a nonconductive region, wherein the conductive region includes at least one first nanowire, and the nonconductive region includes at least one second nanowire that is at least partially sectioned, a method of preparing the nanostructure, and a panel unit including the nanostructure.

Nanostructure, method of preparing the same, and panel units comprising the nanostructure

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Hwaseong-si, South Korea

Jaekwan Kim