Samsung Electronics Co., Ltd.

Samsung Sdi Co., Inc.

Jaejun Chang

Jaeman Choi

Eun Joo Jang

Dae Young Chung

Junhwan Ku

Inhyuk Son

Tae Hyung Kim

Kwanghee Kim

Euncheol Do

Sang Jin Lee

Yuho Won

Ha Il Kwon

Hongkyu Seo

Jeongkuk Shon

Jin Woo Kim

Tae Ho Kim

Sangyoon Lee

Hyun Do Choi

Jeonghun Kim

Youngjin Park

Oul Cho

Jun-Won Jang

Joon-Kee Cho

Byung-Kwon Choi

Taesin Ha

Hyo Sook Jang

Wataru Sotoyama

Sangho Park

Moon Gyu Han

Sangmo Kim

Wook Hwan Kim

Yeonsook Chung

Takahiro Fujiyama

Dalho Huh

Jhunmo Son

Jonghwan Park

Xiangshu Li

Moonseok Kwon

Sangmin Ji

Yeonji Chung

Minsang Song

Dongjin Ham

Hyunjeong Jeon

Min Sik Park

Dongseon Lee

Younsuk Choi

Heejae Lee

Youngchun Kwon

Gahee Kim

Won Je Choi

Bosung Kim

Won Seok Oh

Hyukju Kwon

Dal Heo

Yoonhoi Lee

Fumiaki Kato

Sunghan Kim

Masashi Tsuji

Virendra Kumar Rai

Jun Chwae

Changho Noh

Kwangjin Park

Jaegu Yoon

Wooram Hong

Hyungtae Seo

Won Sik Yoon

Eunsuk Kwon

Namheon Lee

Dmitry Kravchuk

Hyejin Bae

Chan Su Kim

Youngmok Son

Seungsik Hwang

Yusaku Konishi

Takao Motoyama

Keigo Furuta

Jhun Mo Son

Younhee Lim

Satoko Ishibe

O Hyun Kwon

Wook Rae Kim

Tomoyuki Kikuchi

Young-soo Jeong

Wonjoon Son

Taerae Kim

A sealing structure may include a lid including a first lid face, a second lid face opposite to the first lid face, and a fragile area between the first lid face and the second lid face, a cover including a first cover face facing the second lid face and covering the fragile area and a second cover face opposite to the first cover face, wherein a first distance between the second lid face and the first cover face is substantially equal to or less than a second distance between the first cover face and the second cover face, and a connector configured to connect the lid and the cover.

Sealing structure and material containing device including the same

A heat exchanger is provided. The heat exchanger includes a target area that is a target for heat exchange; and a flow path structure. The flow path structure includes at least one inlet; at least one outlet; a first flow path connected to each of the at least one inlet and the at least one outlet, and extending along a first side of the target area; and a second flow path connected to each of the at least one inlet and the at least one outlet, and extending along a second side, different from the first side, of the target area.

Heat exchanger and heat exchanging system comprising the same

An arylamine-fluorene alternating copolymer having a structural unit (A) is represented by Chemical Formula (1): wherein Chemical Formula (1) is the same as described in the detailed description.

Arylamine-fluorene alternating copolymer, electroluminescence device material, and electroluminescence device using the polymer

A light-emitting device including a first electrode, a second electrode, and a light-emitting film disposed between the first electrode and the second electrode, and a method of producing the device. The light-emitting film includes a fluorine-containing organic salt, and quantum dots that do not include cadmium, lead, or a combination thereof, and the fluorine-containing organic salt includes a substituted or unsubstituted C1 to C30 hydrocarbon group, a non-metallic element, fluorine, and at least one of boron or phosphorus, and the non-metallic element includes carbon, nitrogen, oxygen, phosphorus, sulfur, or selenium.

Light-emitting device comprising organic salt bound to quantum dots and production method thereof

A composite including: at least one selected from a silicon oxide of the formula SiOand a silicon oxide of the formula SiOwherein 0<x<2; and graphene, wherein the silicon oxide is disposed in a graphene matrix.

Composite, electrochemical active material composite using the composite, electrode including the composite or electrochemical active material composite, lithium battery including the electrode, field emission device including the composite, biosensor including the composite, semiconductor device including the composite, and thermoelectric device including the composite

A composite including: at least one selected from a silicon oxide of the formula SiOand a silicon oxide of the formula SiOwherein 0&#x3c;x&#x3c;2; and graphene, wherein the silicon oxide is disposed in a graphene matrix.

A light emitting device including a first electrode and a second electrode, and an emission layer disposed between the first electrode and the second electrode and including quantum dots, a first charge auxiliary layer disposed between the emission layer and the first electrode, and a second charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer comprises a first emission layer contacting the first charge auxiliary layer, a second emission layer disposed on the first emission layer, and a third emission layer disposed on the second emission layer. The hole mobility of the first emission layer decreases sequentially from the first emission layer to the third emission layer.

Light emitting device and display device including 1HE same

A semiconductor nanocrystal-ligand composite that includes a semiconductor nanocrystal and a ligand layer including an organic ligand coordinated on the surface of the semiconductor nanocrystal, wherein the organic ligand includes a moiety having a conjugation structure, and a first functional group (X) and a second functional group (Y) linked to the moiety having a conjugation structure, wherein the first functional group (X) is bound to the surface of the semiconductor nanocrystal and the second functional group (Y) is present at an ortho position with respect to the first functional group (X).

Semiconductor nanocrystal-ligand composite and electronic device including composite

Light emitting device and display device including the same

A quantum dot device including an anode and a cathode facing each other, a quantum dot layer disposed between the anode and the cathode, and an electron transport layer disposed between the cathode and the quantum dot layer, wherein the quantum dot layer includes an emissive quantum dot emitting light in at least one part of a wavelength region in a visible region and a non-emissive quantum dot configured to not emit light in a visible region, and a difference between a lowest unoccupied molecular orbital (LUMO) energy level of the non-emissive quantum dot and a LUMO energy level of the electron transport layer is greater than or equal to about 0.5 electronvolts (eV).

Quantum dot device and electronic device comprising an emissive quantum dot and a non-emissive quantum dot

A semiconductor-ligand composite, including a semiconductor nanocrystal and a ligand layer including an organic ligand coordinated on a surface of the semiconductor nanocrystal, wherein the organic ligand includes a compound represented by Chemical Formula 1, a compound represented by Chemical Formula 2 or a combination thereof, wherein Chemical Formula 1 and Chemical Formula 2 are given below and are the same as described in detail herein. 

Semiconductor nanocrystal-ligand composite and device including composite

An electroluminescent device includes a first electrode and a second electrode facing each other, and an emissive layer disposed between the first electrode and the second electrode and including the quantum dots. The quantum dots include a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dots do not include cadmium. The electroluminescent device has an external quantum efficiency of greater than or equal to about 9% and a maximum brightness of greater than or equal to about 10,000 candelas per square meter (cd/m).

Electronic device including quantum dots

A quantum dot, and a light emitting device including the same is provided. The quantum dot includes a semiconductor nanocrystal and an organic ligand bound to the surface of the semiconductor nanocrystal, wherein the organic ligand includes a first ligand derived from a first thiol compound including a C12 or more aliphatic hydrocarbon group, and a second ligand derived from a second thiol compound including a C8 or less aliphatic hydrocarbon group.

Quantum dots, production methods thereof, and light emitting device including the same

An organometallic compound represented by Formula 1: 

Organometallic compound, composition containing the organometallic compound, and organic light-emitting device including the organometallic compound

A positive active material including: a core comprising a metal oxide, a non-metal oxide, or a combination thereof capable of intercalation and deintercalation of lithium ions or sodium ions; and a non-conductive carbonaceous film including oxygen on at least one portion of a surface of the core; a lithium battery including the positive active material; and a method of manufacturing the positive active material.

Cathode active material, secondary battery comprising the same, and method of manufacturing the positive active material

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Seoul, South Korea

Jaejun Chang