Samsung Electronics Co., Ltd.

Jaejoon Oh

Jongseob Kim

Sunkyu Hwang

Younghwan Park

Soogine Chong

Junhyuk Park

Joonyong Kim

Injun Hwang

Dongchul Shin

Boram Kim

Woochul Jeon

Hyukjae Kwon

Jeongsik Ko

Minchul Yu

A semiconductor device package includes a lead frame, a semiconductor device including a first face connected to the lead frame, a second face that faces the first face, a gate pad, a drain pad, and a source pad, the gate pad exposed on the second face of the semiconductor, the drain pad exposed on the second face of the second face, and the source pad exposed on the second face, a gate clip connected to the gate pad, a drain clip connected to the drain pad, a source clip connected to the source pad, the source clip connected to the lead frame, and a molding that seals the lead frame, the semiconductor device, the source clip, the drain clip, and the gate clip.

Semiconductor device package

Provided are a nitride semiconductor buffer structure and a semiconductor device including the same. The buffer structure may include a plurality of buffer layers between a substrate and an active layer. The active layer may include a nitride semiconductor. The plurality of buffer layers may be stacked on each other on the substrate. Each of the plurality of buffer layers may have a super lattice structure and may include a doped nitride semiconductor. The plurality of buffer layers may have different compositions from each other. Adjacent buffer layers, among the plurality of buffer layers, may have different doping concentrations from each other.

Nitride semiconductor buffer structure and semiconductor device including the same

A semiconductor device includes: a semiconductor substrate including a first surface and a second surface facing each other and including a first semiconductor material; a plurality of fin structures upwardly extending on the first surface of the semiconductor substrate, spaced apart from each other by a plurality of trenches, and including the first semiconductor material as the semiconductor substrate; an insulating layer on the first surface of the semiconductor substrate filling at least a portion of the plurality of trenches; a gate electrode layer between the plurality of fin structures and surrounded by the insulating layer; a first conductive layer covering the plurality of fin structures; a second conductive layer on the second surface of the semiconductor substrate; and a shield layer between the gate electrode layer and the semiconductor substrate, surrounded by the insulating layer, and electrically connected to the first conductive layer.

Semiconductor device and power switching system including the same

Provided are a semiconductor device package and/or a method of fabricating the semiconductor device package. The semiconductor device package may include a semiconductor device including a plurality of electrode pads on an upper surface of the semiconductor device, a lead frame including a plurality of conductive members bonded to the plurality of electrode pads, and a mold between the plurality of conductive members.

Semiconductor device package and method of fabricating the same

A high electron mobility transistor (HEMT) includes an active region, in which a channel is formed, and a field region surrounding the active region. The HEMT may include a channel layer; a barrier layer on the channel layer and configured to induce a two-dimensional electron gas (2DEG) in the channel layer; a source and a drain on the barrier layer in the active region; and a gate on the barrier layer. The gate may protrude from the active region to the field region on the barrier layer. The gate may include a first gate and a second gate. The first gate may be in the active region and the second gate may be in the boundary region between the active region and the field region. A work function of the second gate may be different from a work function of the first gate.

High electron mobility transistor

A high electron mobility transistor and a method of manufacturing the same are disclosed. The high electron mobility transistor includes a channel layer, a channel supplying layer causing generation of a two-dimensional electron gas (2DEG) in the channel layer, a source electrode and a drain electrode provided on respective sides of the channel supplying layer, a depletion forming layer provided on the channel supplying layer to form a depletion region in the 2DEG, a gate electrode provided on a portion of the depletion forming layer, and a current limiting layer provided to contact the gate electrode on another portion of the depletion forming layer. The current limiting layer limits a current flow from the gate electrode to the depletion forming layer according to a voltage applied to the gate electrode.

High electron mobility transistor and method of manufacturing the same

A semiconductor integrated circuit device includes: a channel layer, a barrier layer; a first p-type semiconductor layer and a second p-type semiconductor layer, spaced apart from each other on the barrier layer; and a passivation layer on the first p-type semiconductor layer and the second p-type semiconductor layer. The passivation layer may partially inactivate a dopant of at least one of the first p-type semiconductor layer and the second p-type semiconductor layer.

Semiconductor IC device including passivation layer for inactivating a dopant in a p-type semiconductor layer and method of manufacturing the same

A nitride semiconductor device having a field effect gate is disclosed. The disclosed nitride semiconductor device includes a high-resistance material layer including a Group III-V compound semiconductor, a first channel control layer on the high-resistance material layer and including a Group III-V compound semiconductor of a first conductivity type, a channel layer on the channel layer control layer and including a nitride semiconductor of a second conductivity type opposite to the first conductivity type, and a gate electrode having a contact of an ohmic contact type with the first channel control layer.

Nitride semiconductor device with field effect gate

Provided is a high electron mobility transistor including: a channel layer comprising a 2-dimensional electron gas (2DEG); a barrier layer on the channel layer and comprising first regions and a second region, the first regions configured to induce the 2DEG of a first density in portions of the channel layer and the second region configured to induce the 2DEG of a second density different from the first density in other portions of the channel layer; source and drain electrodes on the barrier layer; a depletion formation layer formed on the barrier layer between the source and drain electrodes to form a depletion region in the 2DEG; and a gate electrode on the barrier layer. The first regions may include a first edge region and a second edge region corresponding to both ends of a surface of the gate electrode facing the channel layer.

Provided is a field effect transistor (FET) including a gradually varying composition channel. The FET includes: a drain region; a drift region on the drain region; a channel region on the drift region; a source region on the channel region; a gate penetrating the channel region and the source region in a vertical direction; and a gate oxide surrounding the gate. The channel region has a gradually varying composition along the vertical direction such that an intensity of a polarization in the channel region gradually varies.

Field effect transistor including gradually varying composition channel

A semiconductor device includes a channel layer including a channel; a channel supply layer on the channel layer; a channel separation pattern on the channel supply layer; a gate electrode pattern on the channel separation pattern; and an electric-field relaxation pattern protruding from a first lateral surface of the gate electrode pattern in a first direction parallel with an upper surface of the channel layer. An interface between the channel layer and the channel supply layer is adjacent to channel. A size of the gate electrode pattern in the first direction is different from a size of the channel separation pattern in the first direction. The gate electrode pattern and the electric-field relaxation pattern form a single structure.

Semiconductor device and method of fabricating the same

A method of controlling a temperature of metal-air battery apparatus includes measuring the temperature of the metal-air battery apparatus to obtain the temperature and a temperature deviation of the metal-air battery apparatus, comparing the measured temperature and the temperature deviation of the metal-air battery apparatus with a preset temperature and a preset temperature deviation, respectively; and adjusting the temperature of an inlet module or a main module when the measured temperature of the metal-air battery apparatus is less than the preset temperature or the temperature deviation of the metal-air battery apparatus is greater than the preset temperature deviation.

Metal-air battery apparatus and method of controlling temperature thereof

Provided are a high electron mobility transistor and a method of manufacturing the high electron mobility transistor. The high electron mobility transistor includes a gate electrode provided on a depletion forming layer. The gate electrode includes a first gate electrode configured to form an ohmic contact with the depletion forming layer, and a second gate electrode configured to form a Schottky contact with the depletion forming layer.

A high electron mobility transistor (HEMT) includes a channel layer comprising a group III-V compound semiconductor; a barrier layer comprising the group III-V compound semiconductor on the channel layer; a gate electrode on the barrier layer; a source electrode over gate electrode; a drain electrode spaced apart from the source electrode; and a metal wiring layer. A same layer of the metal wiring layer includes a gate wiring connected to the gate electrode, a source field plate connected to the source electrode, and a drain field plate connected to the drain electrode.

A high electron mobility transistor (HEMT) includes a channel layer, a plurality of barrier layers, and a p-type semiconductor layer. The barrier layers have an energy band gap greater than that of the channel layer. A gate electrode is arranged on the p-type semiconductor layer. A source electrode and a drain electrode are apart from the p-type semiconductor layer and the gate electrode on the barrier layers. Impurity concentrations of the barrier layers are different from each other in a drift area between the source electrode and the drain electrode.

Growing community of inventors

Seongnam-si, South Korea

Jaejoon Oh