Samsung Electro-Mechanics Co., Ltd.

Georgia Tech Research Corporation

Jaejoon Chang

Chang-Ho Lee

Wangmyong Woo

Haksun Kim

Joy Laskar

Ki Seok Yang

Kyu Hwan An

Minsik Ahn

Younsuk Kim

Shinichi Iizuka

Dong Ho Lee

Ockgoo Lee

Hyungwook Kim

Kijoong Kim

Changhyuk Cho

Hyogun Bae

Woonyun Kim

Jeonghu Han

Systems and methods may be provided for a CMOS RF antenna switch. The systems and methods for the CMOS RF antenna switch may include an antenna that is operative to transmit and receive signals over at least one radio frequency (RF) band, and a transmit switch coupled to the antenna, where the transmit switch is enabled to transmit a respective first signal to the antenna and disabled to prevent transmission of the first signal to the antenna. the systems and methods for the CMOS RF antenna switch may further include a receiver switch coupled to the antenna, where the receiver switch forms a filter when enabled and a resonant circuit when disabled, where the filter provides for reception of a second signal received by the antenna, and where the resonant circuit blocks reception of at least the first signal.

Systems, methods and apparatuses for complementary metal oxide semiconductor (CMOS) antenna switches using switched resonators

Systems and methods are provided for overlapping compact multiple transformers. The systems and methods may include a first transformer section that includes a first primary winding section and a first secondary winding, where the first primary winding section is inductively coupled to the first secondary winding, where the first transformer section is associated with a first rotational current flow direction in the first primary winding section; and a second transformer section that includes a second primary winding section and a second secondary winding, where the second primary winding section is inductively coupled to the second secondary winding, wherein the second transformer section is associated with a second rotational current flow direction in the second primary winding section, where a first portion of the first primary winding section is adjacent to a second portion of the second primary winding section, where the adjacent first and second portions include a substantially same first linear current flow direction.

Overlapping compact multiple transformers

Embodiments of the invention may provide for a CMOS antenna switch, which may be referred to as a CMOS SP4T switch. The CMOS antenna switch may operate at a plurality of frequencies, perhaps around 900 MHz and 1.9 GHz according to an embodiment of the invention. The CMOS antenna switch may include both a receiver switch and a transmit switch. The receiver switch may utilize a multi-stack transistor with body substrate tuning to block high power signals from the transmit path as well as to maintain low insertion loss at the receiver path. On the other hand, in the transmit switch, a body substrate tuning technique may be applied to maintain high power delivery to the antenna. Example embodiments of the CMOS antenna switch may provide for 31 dBm P 1 dB at both bands (e.g., 900 MHz and 1.8 GHz). In addition, a 0.9 dB and &#x2212;1.1 dB insertion loss at 900 MHz and 1.9 GHz, respectively, may be obtained according to example embodiments of the invention.

Systems, methods, and apparatuses for complementary metal oxide semiconductor (CMOS) antenna switches using body switching in multistacking structure

Systems, methods, and apparatuses are provided for linear envelope elimination and restoration transmitters that are based on the polar modulation operating in conjunction with the orthogonal recursive predistortion technique. The polar modulation technique enhances the battery life by dynamically adjusting the bias level. Further, the analog orthogonal recursive predistortion efficiently corrects amplitude and phase errors in radio frequency (RF) power amplifiers (PA) and enhances the PA output capability. Additionally, even-order distortion components are used to predistort the input signal in a multiplicative manner so that the effective correction bandwidth is greatly enhanced. Also, the predistortion scheme, which uses instantaneously feed-backed envelope distortion signals, allows for correction of any distortion that may occur within the correction loop bandwidth, including envelope memory effects.

Systems, methods, and apparatuses for linear envelope elimination and restoration transmitters

Systems and methods may be provided for a power amplifier system. The systems and methods may include a plurality of power amplifiers, where each power amplifier includes at least one output port. The systems and methods may also include a plurality of primary windings each having a first number of turns, where each primary winding is connected to at least one output port of the plurality of power amplifiers, and a single secondary winding inductively coupled to the plurality of primary windings, where the secondary winding includes a second number of turns greater than the first number of turns.

Systems and methods for power amplifiers with voltage boosting multi-primary transformers

System and methods are provided for multi-path orthogonal recursive predistortion. The systems and methods may include generating a first orthogonal signal and a second orthogonal signal, where the first and second signals are orthogonal components of an input signal and processing, at a first predistortion module, the first orthogonal signal and a first error correction signal to generate a first predistorted signal. The system and methods may also include processing, at a second predistortion module, the second orthogonal signal and a second error correction signal to generate a second predistorted signal, and providing the generated first and second predistorted signals to a nonlinear device, where the nonlinear device generates an output based upon the first and second predistorted signals, where the first error correction signal is determined based upon an analysis of the output and the first predistorted signal, and where the second error correction signal is determined based upon an analysis of the output and the second predistorted signal.

Systems, methods, and apparatuses for multi-path orthogonal recursive predistortion

Systems and methods are disclosed for providing a linear polar transmitter. The systems and methods may include generating an input amplitude signal and an input phase signal, where the input amplitude signal and the input phase signal are orthogonal components of an input signal, and where the input amplitude signal and the input phase signal are generated on respective first and second signal paths. The systems and methods may also include processing the input amplitude signal along the first signal path using an amplitude error signal to generate a predistorted amplitude signal, and processing the input phase signal along the second signal path using an phase error signal to generate a predistorted phase signal. The systems and methods may also include providing the predistorted amplitude signal along the first signal path and the predistorted phase signal along the second signal path to a power amplifier to generate an output signal, where the amplitude error signal is generated from a comparison of at least an amplitude portion of the output signal with the predistorted amplitude signal and where the phase error signal is generated from a comparison of at least a phase portion of the output signal with the predistorted phase signal.

Systems, methods, and apparatuses for linear polar transmitters

Embodiments of the invention may provide for a CMOS antenna switch, which may be referred to as a CMOS SPDT switch. The CMOS antenna switch may operate at a plurality of frequencies, perhaps around 900 MHz 1.9 GHz and 2.1 GHz according to an embodiment of the invention. The CMOS antenna switch may include both a receiver switch and a transmit switch. The receiver switch may utilize a multi-stack transistor with body substrate switching and source and body connection along with body floating technique to block high power signals from the transmit path by preventing channel formation of the device in OFF state as well as to maintain low insertion loss at the receiver path. Example embodiments of the CMOS antenna switch may provide for 35 dBm P 1 dB at both bands (e.g., 900 MHz and 1.9 GHz and 2.1 GHz). In addition, a &#x2212;60 dBc second and third harmonic up to 28 dBm input power to the switch, may be obtained according to example embodiments of the invention.

Systems, methods, and apparatuses for high power complementary metal oxide semiconductor (CMOS) antenna switches using body switching and substrate junction diode controlling in multistacking structure

Embodiments of the invention may provide for a load regulation tuner that reduces the load regulation effect. The load regulation tuner may include a load current controlled current source that is responsive to a load current from a power transistor of a linear regulator, where the load current controlled current source includes a sensing transistor that generates a fraction of the load current as a sensed partial load current. The load regulation tuner may also include a resistor in parallel with a load current controlled current source, and where the paralleled resistor and the load current controlled current source form at least a portion of a feedback block that adjusts an operation of the linear regulator to provide a substantially constant load voltage.

Systems, methods, and apparatuses for implementing a load regulation tuner for linear regulation

Embodiments of the invention may provide for enhancement systems and methods for a power amplifier output control system. In an example embodiment, driver amplifier control may be provided in conjunction with power amplifier control to improve the power efficiency and/or dynamic range of the transmitter system. Furthermore, control over the driver amplifier may allow for relaxed power control slope, which may lessens the burden of digital to analog converters (DACs) in transmitter systems such as cellular transmitter systems. Also, systems and methods in accordance with example embodiments of the invention may provide a less sensitive solution to operational environment variations such as temperature, battery power voltage and implementation IC process.

Systems and methods for switching mode power amplifier control

Embodiments of the invention may provide for systems and methods for providing a power amplifier with integrated passive device, thereby improving the performance of the power amplifier. The power amplifier may include a signal amplification section, a power combining section, and a coupling device section that interconnects the signal amplification section and the power combining section. The signal amplification section may be implemented on a first substrate, and the power combining section may be implemented on a second substrate, where the first substrate and the second substrate may be different. The power combining section may be implemented by the integrated passive device (IPD) that may have characteristics of high performance passive device with flexibility of implementing diverse functions, including a notch filter, a low pass filter, and/or bypass capacitance for bias network. The power combining section implemented by the integrated passive device may have an improved power combining efficiency.

Systems and methods for power amplifier with integrated passive device

Embodiments of the invention may provide for a CMOS antenna switch, which may be referred to as a CMOS SPDT switch. The CMOS antenna switch may operate at a plurality of frequencies, perhaps around 900 MHz, 1.9 GHz and 2.1 GHz according to an embodiment of the invention. The CMOS antenna switch may include both a receiver switch and a transmit switch. The receiver switch may utilize a multi-stack transistor with body substrate switching and attachment of external capacitor between drain and gate to block high power signals from the transmit path as well as to maintain low insertion loss at the receiver path. Exemplary embodiments of the CMOS antenna switch may provide for 38 dBm P 0.1 dB at multi bands (e.g., 900 MHz, 1.8 GHz, and 2.1 GHz). In addition, &#x2212;60 dBc second and third harmonic performance up to 30 dBm input, may be obtained according to example embodiments of the invention.

Systems, methods and apparatuses for high power complementary metal oxide semiconductor (CMOS) antenna switches using body switching and external component in multi-stacking structure

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Duluth, GA, United States of America

Jaejoon Chang