Samsung Electronics Co., Ltd.

Sungkyunkwan University

Jaehyun Yang

Yujin Kim

Bio Kim

Junggeun Jee

Kyong-Won An

Sookyeom Yong

Youngjun Cheon

Seongjun Park

Seongjun Jeong

Hyoungsub Kim

Hyena Kwak

Hoojeong Lee

A three-dimensional semiconductor memory device is provided. The device may include a first stack structure on a substrate including a cell array region and a connection region, a second stack structure on the first stack structure, a first vertical channel hole penetrating the first stack structure and partially exposing the substrate and a bottom surface of the second stack structure, on the cell array region, a second vertical channel hole penetrating the second stack structure and exposing the first vertical channel hole, on the cell array region, a bottom diameter of the second vertical channel hole being smaller than an top diameter of the first vertical channel hole, and a buffer pattern placed in the first vertical channel hole and adjacent to the bottom surface of the second stack structure.

Three-dimensional semiconductor memory devices

An optoelectronic device is disclosed. The disclosed optoelectronic device includes an oxide semiconductor layer and a semiconducting two-dimensional (2D) material layer forming a stack structure with the oxide semiconductor layer.

Optoelectronic device

Growing community of inventors

Suwon-si, South Korea

Jaehyun Yang