Electronics and Telecommunications Research Institute

Mvtech

Unitex Co., Ltd

Jaehyun Moon

Jeong Ik Lee

Jun-Han Han

Doo-Hee Cho

Chul Woong Joo

Nam Sung Cho

Jin Wook Shin

Hye Yong Chu

Byoung Gon Yu

Jin Huh

Joo Hyun Hwang

Jonghee Lee

Seung Koo Park

Chi-Sun Hwang

Jong Tae Lim

Seung Youl Kang

Joon Tae Ahn

Young Sam Park

Jae-Eun Pi

Seongdeok Ahn

Yong Hae Kim

Byoung-Hwa Kwon

Sung Haeng Cho

Hyunsu Cho

Jong-Heon Yang

Ji Hun Choi

Chan Woo Park

Hyunkoo Lee

Jeho Na

Ji-Young Oh

Joo Yeon Kim

Seong-Mok Cho

Sooji Nam

Hee-ok Kim

Gi Heon Kim

Su Jae Lee

Himchan Oh

Byung-Do Yang

Kyunghee Choi

HongKyw Choi

Jae-Min Kim

Jae Bon Koo

Kyung Soo Suh

Won Jae Lee

Myung Lae Lee

Sang Hoon Cheon

Hojun Ryu

Seong Hyun Kim

Sung Ryul Yun

Tae-Youb Kim

Chunwon Byun

Tae Hyoung Zyung

Chan-Mo Kang

Jin A Park

Sukyung Choi

Jongchan Lee

Sung Jong Cho

Myung Gi Lee

Boong Joon Lee

Bong Joon Lee

Jong Chan Jeong

Ha Kyun Lee

Disclosed is a meta-structure. The meta-structure includes a lower electrode, a lower insulating layer on the lower electrode, a lower metal oxide layer on the lower insulating layer, a lower metal layer on the lower metal oxide layer, a middle metal oxide layer on the lower metal layer, an upper metal layer on the middle metal oxide layer, an upper metal oxide layer on the upper metal layer, an upper insulating layer on the upper metal oxide layer, and antenna electrodes on the upper insulating layer.

Meta-structure

Disclosed is a meta-structure. The meta-structure includes a lower electrode, a lower insulating layer on the lower electrode, a lower metal oxide layer on the lower insulating layer, a metal layer on the lower metal oxide layer, an upper metal oxide layer on the metal layer, an upper insulating layer on the upper metal oxide layer, and antenna electrodes on the upper insulating layer.

Provided is a Complementary Metal Oxide Semiconductor (CMOS) logic element. The CMOS logic element includes a substrate including a PMOS area, a circuit wiring structure including an insulating layer and a wiring layer alternately stacked on the substrate, wherein the circuit wiring structure includes an NMOS area vertically spaced apart from the PMOS area, a first transistor disposed on the PMOS area, and a second transistor disposed on the NMOS area and complementarily connected to the first transistor, wherein the first transistor includes a first gate electrode, source/drain areas formed on the PMOS area on both sides of the first gate electrode, and a first channel connecting the source and drain areas to each other, wherein the second transistor includes a second gate electrode and a second channel vertically overlapping the second gate electrode, wherein the first channel includes silicon, wherein the second channel includes an oxide semiconductor.

CMOS logic element including oxide semiconductor

Provided are stretchable electronics and a method for manufacturing the same. The stretchable electronics may include a substrate, a plurality of electronic elements disposed to be spaced apart from each other on the substrate, and a wire structure disposed on the substrate to connect the plurality of electronic elements to each other. The wire structure may include an insulator extending from one of the electronic elements to the other of the adjacent electronic elements and a metal wire configured to cover a top surface and side surfaces of the insulator. The insulator may include at least one bent part in a plan view.

Stretchable electronics and method for manufacturing the same

An apparatus which analyses a depth of a holographic image is provided. The apparatus includes an acquisition unit that acquires a hologram, a restoration unit that restores a three-dimensional holographic image by irradiating the hologram with a light source, an image sensing unit that senses a depth information image of the restored holographic image, and an analysis display unit that analyzes a depth quality of the holographic image, based on the sensed depth information image, and the image sensing unit uses a lensless type of photosensor.

Apparatus for analyzing depth of holographic image and analyzing method thereof

Provided is a static random-access memory (SRAM) device. The SRAM device includes a substrate including a PMOS area, a circuit wiring structure including an insulating layer and a wiring layer alternately stacked on the substrate, wherein the circuit wiring structure includes a first NMOS area and a second NMOS area vertically separated from the PMOS area with the first NMOS area therebetween, a first transistor including a first gate electrode disposed on the PMOS area, source/drain areas formed on the PMOS area on both sides of the first gate electrode, and a first channel connecting the source and drain areas to each other, a second transistor including a second gate electrode disposed in the first NMOS area and a second channel vertically overlapping the second gate electrode, and a third transistor including a third gate electrode disposed in the second NMOS area and a third channel vertically overlapping the third gate electrode, wherein the first channel includes silicon, wherein the second channel and the third channel include an oxide semiconductor.

SRAM device including oxide semiconductor

Provided are a semiconductor device, a display panel, and a display device including the same. The semiconductor device includes a lower electrode on one side of a substrate, a spacer on another side of the substrate, a middle electrode on the spacer, a lower channel layer on portions of a sidewall of the spacer, the middle electrode, and the lower electrode, a lower gate insulating layer on the lower channel layer, a common gate electrode on the gate insulating layer, an upper gate insulating layer on the common gate electrode, an upper electrode on the spacer and the upper gate insulating layer of the middle electrode, an upper channel layer connected to the upper electrode and disposed on a sidewall of the upper gate insulating layer, and a contact electrode connected to a portion of the upper channel layer and passing through the lower gate insulating layer and the upper gate insulating layer outside the common gate electrode so as to be connected to the lower electrode.

Semiconductor device, display panel, and display device including the same

Provided is a light emitting device including a lower electrode, an upper electrode disposed to face the lower electrode, a quantum dot light emitting layer between the lower electrode and the upper electrode, an electron transport layer between the lower electrode and the quantum dot light emitting layer, and a hole transport layer between the upper electrode and the quantum dot light emitting layer, wherein the quantum dot light emitting layer includes a quantum dot, and a first ligand on a surface of the quantum dot, and a second ligand on the surface of the quantum dot.

Light emitting device including a quantum dot light emitting layer having a first and second ligand on a surface of a quantum dot

Provided is a pressure sensitive display device including a sensing substrate, a reaction substrate provided on the sensing substrate, and spacers provided between the sensing substrate and the reaction substrate to space the sensing substrate apart from the reaction substrate. Here, the sensing substrate includes a flexible substrate and a touch electrode provided on one surface of the flexible substrate, which faces the reaction substrate. The reaction substrate includes a transparent substrate, a transparent electrode provided on one surface of the transparent substrate, which faces the sensing substrate, and a light emitting layer disposed on the transparent electrode.

Pressure sensitive display device having touch electrode and light emitting layer

Provided is a biometric information measurement method. The method includes providing a bio-material including at least one of cells and tissues, contacting a first electrode and a second electrode with the bio-material and applying a first electrical signal and a second electrical signal to the bio-material, sensing a third electrical signal from the bio-material, and analyzing an oxygen concentration in the bio-material from the third electrical signal.

Biometric information measurement method and biometric information measurement system

Provided is a complex biometric sensor. The complex biometric sensor includes a substrate including a light emitting region, a first light receiving region, and a second light receiving region, a light emitting part disposed adjacent to the substrate in the light emitting region, a color conversion layer disposed on the substrate in the light emitting region and vertically overlapping the light emitting part; a first light receiving layer disposed on the substrate in the first light receiving region, and a second light receiving layer disposed on the substrate in the second light receiving region. The light emitting part generates light of a first wavelength. The color conversion layer receives light of the first wavelength and emits the light of the first wavelength and light of the second wavelength. The first light receiving layer detects the light of the first wavelength. The second light receiving layer detects the light of the second wavelength.

Complex biometric sensor including color conversion layer

Provided is a thin film transistor including a substrate, a first spacer on the substrate, a second spacer on the first spacer, a light shield layer intervened between the first spacer and the second spacer, a semiconductor layer on the second spacer, and a gate electrode on the semiconductor layer, wherein the light shield layer includes a plurality of inclined surfaces against a top surface of the substrate.

Thin film transistor having light shielding structure

The inventive concept provides an organic electronic device and a method of fabricating the same. The organic electronic device includes a flexible substrate configured to include a first region and a second region which are laterally spaced apart from each other, an organic light-emitting diode disposed in the first region of the flexible substrate, and a photodetector disposed in the second region of the flexible substrate, wherein the organic light-emitting diode and the photodetector are disposed on the same plane.

Organic electronic device and method of fabricating the same

Provided is a stretchable display including an elastic body, a light emitting unit on the elastic body, and a wiring unit on the elastic body, wherein the light emitting unit includes a first substrate unit on the elastic body, a buffer layer on the first substrate unit, and a light emitting element on the buffer layer, the wiring unit includes a second substrate unit on the elastic body, a driving element configured to control the light emitting element, a wiring configured to electrically connect the driving element and the light emitting element, and an insulation layer configured to cover the driving element and the wiring, the light emitting unit and the wiring unit have respective corrugation structures, a thickness of the light emitting unit is larger than that of the wiring unit, a modulus of elasticity of the buffer layer is larger than that of the insulation layer, and a modulus of elasticity of the elastic body is smaller than that of the insulation layer.

Stretchable display

A composition for forming film having wrinkle structure and a method of forming the film are disclosed. The composition includes photo-curable agent and photoinitiator dissolved in the photo-curable agent. The cut off wavelength of light transmittance of the photo-curable agent is greater than the cut off wavelength of light absorbance of the photoinitiator. Photo-cured thin film is formed at the upper portion of composition layer at an initial time period of irradiation. By subsequent contraction, the photo-cured thin film forms wrinkles. The wrinkle structure is controlled by the relation of the cut off wavelength of light transmittance of the photo-curable agent and the cut off wavelength of light absorbance of the photoinitiator, the photo-curing rate of the composition and the thickness of the composition layer, and the photoinitiator concentration, etc., before photo-curing. The film may increase the emission efficiency of LED and OLED and the sensing effect of sensor.

Composition for forming film having wrinkle structure and method of forming the film

Growing community of inventors

Daejeon, South Korea

Jaehyun Moon