Samsung Electronics Co., Ltd.

Jaehyeok Baek

SungYong Cho

Donggun An

MoonChul Choi

Daehyun Kwon

Sung-Yong Cho

Hye-Ran Kim

Hyejung Kwon

Hye-ran Kim

Moon-Chul Choi

Daewoong Lee

Min Ho Maeing

Saetbyeol Kim

Seongyeal Yang

A multiplexer selects one of a first to a fourth data signal in response to a first to a fourth pulse. The first to fourth pulses respectively correspond to the first to fourth data signals and sequentially toggle. The multiplexer includes: (1) a NAND gate that receives the first data signal, a fourth complementary data signal that is a complementary signal of the fourth data signal, and the first pulse and outputs a first gate signal and (2) a NOR gate that receives the first data signal, the fourth complementary data signal, and a first complementary pulse that is complementary to the first pulse and outputs a second gate signal. The first data signal corresponds to a rising edge of the first pulse, and the fourth complementary data signal corresponds to a rising edge of the fourth pulse.

Multiplexer and serializer including the same

Provided is a memory system including: a memory device; and a memory controller configured to transmit a command and address (CA) signal and a data clock (WCK) signal to the memory device, and transmitting a data (DQ) signal to the memory device or receive the DQ signal from the memory device. The memory device may include a clock distribution network configured to generate a first division clock signal for sampling the CA signal and a second division clock signal for sampling the DQ signal from the data clock signal, a CA sampler configured to sample the CA signal based on the first division clock signal, and a CA parity check circuitry configured to output a parity error signal in response to a parity error occurring for the CA signal, and the memory controller may include processing circuitry configured to enter CA training in response to receiving the parity error signal.

Memory device, memory system and method for operating memory system including command and address training

A ZQ calibration circuit included in a semiconductor memory device includes a reference voltage selector configured to output a reference voltage selected from among a first reference voltage and a second reference voltage generated based on a first supply voltage and a second supply voltage, in response to a selection signal, a ZQ engine configured to generate a pull-up code and a pull-down code based on the selected reference voltage, and a loop selector configured to output the selection signal according to whether each of the pull-up code and the pull-down code is toggled. Levels of the first and second reference voltages are different from each other, smaller than a level of the first supply voltage, and greater than a level of the second supply voltage.

ZQ calibration circuit, operation method of the ZQ calibration circuit, and semiconductor memory device

Provided is a transmitting device for enlarging the size of a data eye of a transmission signal. The transmitting device includes an output driver including a plurality of driver circuits that drive a plurality of multi-level signals onto an output node, and a logic circuit configured to detect a direction of a pull-up or pull-down operation of each of the plurality of driver circuits by transitions of the plurality of driver control signals and generate pulse signals. The plurality of multi-level signals are driven based on a plurality of driver control signals and pulse signals, respectively, and the logic circuit provides a pulse signal to at least one static driver circuit connected to a driver control signal that does not transition, from among the plurality of driver circuits.

Transmitting devices that provide transmission signals having enlarged data eyes

In a transmitter circuit, an impedance calibration circuit is configured to generate an impedance code for impedance matching, an encoder is configured to receive the impedance code and to generate a delay compensation signal based on the impedance code. A delay circuit is configured to output delay data that are delayed from input data by a delay value determined based on the delay compensation signal. A feed-forward equalizer is configured to receive the input data and the delay data, and to equalize the input data based on a main coefficient used for the input data and an equalization coefficient used for the delay data to generate transmission data.

Transmitter circuit and operation method thereof

A calibration circuit includes a first, second and third pull-up units each connected to a first power supply node, and first and second pull-down units each connected to a second power supply node. A first code generator is configured to generate a first code by comparing a voltage of a pad at which the first pull-up unit is connected to an external resistor with a reference voltage, and a second code generator is configured to generate a second code by comparing a voltage of a first intermediate node with the reference voltage and output the second code to the first and second pull-down units. A third code generator is configured to generate a third code by comparing a voltage of a second intermediate node between the second pull-down unit and the third pull-up unit with the reference voltage.

Growing community of inventors

Suwon-si, South Korea

Jaehyeok Baek