Samsung Electronics Co., Ltd.

Jaehwang Sim

Jaehan Lee

Keonsoo Kim

Jaeho Min

Seungyoon Kim

Minkyu Chung

Sangjae Lee

A semiconductor device may include a first structure, a second structure on the first structure, and gate contact plugs penetrating through the first and second structures. The first structure may include a first stack structure including first gate layers and first insulating layers alternately stacked, a first pad capping pattern penetrating through at least a first portion of the first stack structure, and a first buffer capping pattern penetrating through at least a second portion of the first stack structure and spaced apart from the first pad capping pattern. The second structure may include a second stack structure including second gate layers and second insulating layers alternately stacked, and a second pad capping pattern penetrating through at least a portion of the second stack structure. The first gate layers may include first gate pads covered by the first pad capping pattern.

Semiconductor device and data storage system including the same

A pattern structure in a semiconductor device includes an extending line and a pad connected with an end portion of the extending line. The pad may have a width that is larger than a width of the extending line. The pad includes a protruding portion extending from a lateral portion of the pad. The pattern structure may be formed by simplified processes and may be employed in various semiconductor devices requiring minute patterns and pads.

Pattern structures in semiconductor devices and methods of forming pattern structures in semiconductor devices

Pattern structures in semiconductor devices

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Seoul, South Korea

Jaehwang Sim