Samsung Electronics Co., Ltd.

Jaehwang Jung

Myungjun Lee

Wookrae Kim

Jinseob Kim

Taewan Kim

Seungwoo Lee

Sungho Jang

Yasuhiro Hidaka

Mitsunori Numata

Gwangsik Park

Seungbeom Park

Kyungwon Yun

Jaehyeon Son

Changhyeong Yoon

Myoungki Ahn

Jungchul Lee

Juntaek Oh

Jinyong Kim

Minhwan Seo

Sangwoo Bae

Inho Shin

Akinori Okubo

Hyejin Shin

Sangjoon Hong

Jangwoon Sung

Yongju Jeon

Seoyeon Jeong

A semiconductor measurement device may include an illumination apparatus having a polarizer on a propagation path of light output from a light source; an optical assembly including an objective lens configured to allow light passing through the polarizer to be incident on a sample and a beam splitter configured to transmit light reflected from the sample to first and second sensors; and a controller. The controller may be configured to determine an alignment state of patterns in a first region of the sample using a first original image output by the first sensor and an alignment state of patterns in a second region of the sample using a second original image output by the second sensor. The first sensor includes a first image sensor and a self-interference generator in a path along which light is incident on the first image sensor. The second sensor includes a second image sensor.

Semiconductor measurement apparatus

Provided are a level sensor configured to detect a height level of a substrate, and a substrate processing apparatus including the level sensor. The level sensor includes a measurement light source configured to radiate measurement light toward the substrate, a prism configured to split reflected light of the measurement light into first polarized light and second polarized light and generate a first optical path length difference between the first polarized light and the second polarized light, an optical path length modulator configured to keep constant an optical path length of the first polarized light and periodically change an optical path length of the second polarized light, and a detector configured to detect the first optical path length difference based on an interference signal between the first polarized light and the second polarized light.

Level sensor and substrate processing apparatus including the same

Provided is a pupil ellipsometry measurement apparatus configured to measure an object, the pupil ellipsometry measurement apparatus including a stage configured to support the object to be measured, a light source unit configured to generate and output light, an irradiation optical system configured to focus the light from the light source unit on the object, a first detector configured to detect an image of reflected light from the object on an imaging plane, a self-interference generator (SIG) configured to generate self-interference with respect to the reflected light, a second detector configured to detect a hologram image of interference light of the SIG on a pupil plane, and a processor configured to reconstruct reflectance information based on the hologram image, and measure the object.

Pupil ellipsometry measurement apparatus and method and method of fabricating semiconductor device using the pupil ellipsometry measurement method

A semiconductor measurement apparatus includes an illumination unit configured to provide illumination light including linearly polarized light beams having different wavelengths, an optical unit including an objective lens configured to allow the illumination light to be incident on a sample, the optical unit being configured to transmit reflection light generated when the illumination light is reflected from the sample, a self-interference generator configured to self-interfere the reflection light transmitted from the optical unit and transmit the reflection light to a first image sensor, for each wavelength, and a controller. The controller is configured to process a measurement image output by the image sensor to divide the measurement image into a first image representing an intensity ratio of a polarization component of the reflection light and a second image representing a phase difference of the polarization component of the reflection light, for each wavelength.

Provided are a diffraction-based metrology apparatus having high measurement sensitivity, a diffraction-based metrology method capable of accurately performing measurement on a semiconductor device, and a method of manufacturing a semiconductor device using the metrology method. The diffraction-based metrology apparatus includes a light source that outputs a light beam, a stage on which an object is placed, a reflective optical element that irradiates the light beam onto the object through reflection, such that the light beam is incident on the object at an inclination angle, the inclination angle being an acute angle, a detector that detects a diffracted light beam that is based on the light beam reflected and diffracted by the object and a processor that measures a 3D pupil matrix for the diffracted light beam and analyze the object based on the 3D pupil matrix.

Metrology apparatus and method based on diffraction using oblique illumination and method of manufacturing semiconductor device using the metrology method

Provided is an imaging ellipsometry (IE)-based inspection method including selecting a mode from among a first mode of an IE-based inspection device having a first field of view (FOV) and a second mode of an IE-based inspection device having a second FOV, measuring an inspection target by the IE-based inspection device based on the selected mode, and determining whether the inspection target is normal based on a result of the measuring, wherein the measuring of the inspection target comprises simultaneously measuring patterns included in a plurality of cells provided in a region of the inspection target, the region corresponding to an FOV of the selected mode.

Imaging ellipsometry (IE)-based inspection method and method of fabricating semiconductor device by using IE-based inspection method

An imaging apparatus includes a light source configured to generate and output light, a stage having a measurement target thereon, a line-scan spectral imaging (SI) optical system configured to measure the measurement target using a first scale and to slopingly irradiate the light from the light source onto the measurement target in a line beam shape, divide light reflected by the measurement target, and perform imaging of the divided light, and an angle-resolved SI optical system configured to measure the measurement target at a second scale that is smaller than the first scale and configured to divide the light from the light source into monochromatic light, slopingly irradiate the monochromatic light onto the measurement target by using a reflective objective lens, and perform imaging of light reflected by the measurement target.

Multi-scale spectral imaging apparatuses and methods, and methods of manufacturing semiconductor devices by using the imaging methods

A measurement system is disclosed. A measurement system includes an illumination module, a mirror module, a stage, and a detector. The illumination module includes a light source, an optical fiber, a collimating mirror, a polarization state generator, a beam control mirror, and a relay mirror. The mirror module includes a first beam splitter and a reflective objective mirror. The beam control mirror is movable to relay light received from the polarization state generator to various positions on the relay mirror.

Measurement system capable of adjusting AOI, AOI spread and azimuth of incident light

A super-resolution holographic microscope includes a light source configured to emit input light, a diffraction grating configured to split the input light into first diffracted light and second diffracted light, a mirror configured to reflect the first diffracted light, a wafer stage arranged on an optical path of the second diffracted light and on which a wafer is configured to be arranged, and a camera configured to receive the first diffracted light that is reflected by the mirror and the second diffracted light that is reflected by the wafer to generate a plurality of hologram images of the wafer.

Super-resolution holographic microscope

An inspection apparatus includes: a light source that generates and outputs light; a stage on which an inspection target is arranged; an irradiation optical system that irradiates light from the light source to the inspection target; a detector that receives the light diffracted from the inspection target and generates diffraction image; and a detector moving device configured to move the detector on a z-axis, which is an optical axis of the light, and an x-y plane perpendicular to the z-axis. Furthermore, while the detector moves on the x-y plane and the z-axis through the detector moving device, the detector generates a plurality of the diffraction images with different positions on the x-y plane and the z-axis with respect to the inspection target, and thus simultaneously implements phase retrieval and super resolution of diffraction images.

Inspection apparatus and method based on coherent diffraction imaging (CDI)

Provided is a wafer inspection apparatus including a monochromator that extracts monochromatic light, a collimator that outputs the monochromatic light as parallel light, a first polarization assembly that polarizes the parallel light and radiates the polarized light to a wafer, an imaging optical system that condenses light reflected from the wafer, a spectroscope that splits the condensed light into a plurality of spectrums, a first lens that condenses the plurality of spectrums, a second polarization assembly that outputs the plurality of spectrums as a plurality of polarized lights having different diffraction orders and a difference of 90&#xb0;, a second lens that condenses the plurality of polarized lights, a third polarization assembly that outputs common polarized light based on the plurality of polarized interfering with each other, a camera that generates a phase difference image based on the common polarized light, and a signal processor that analyzes the phase difference image.

Growing community of inventors

Hwaseong-si, South Korea

Jaehwang Jung