Samsung Electronics Co., Ltd.

Jaehun Seo

Jongdeuk Son

Jongchul Park

Myeong-Cheol Kim

Cheol Kyu Kim

Siyoung Choi

Gwang-Hyun Baek

Kisoo Chang

YooJung Lee

Sungkwon Kim

Sangmin Lee

Chungha Kim

Sechung Oh

Giha Woo

Vladimir Urazaev

Hyungjoon Kwon

Ken Tokashiki

Hyun-woo Yang

Myounglo Lee

Kwanue Hong

Jong-Kyu Kim

Inho Kim

Kwaneui Hong

Jung-Ik Oh

Young-Seok Choi

Electronic device

Field effect transistors including a source region and a drain region on a substrate, a fin base protruding from a top surface of the substrate, a plurality of fin portions extending upward from the fin base and connecting the source region with the drain region, a gate electrode on the fin portions, and a gate dielectric between the fin portions and the gate electrode may be provided. A top surface of the substrate may include a plurality of grooves (e.g., a plurality of convex portions and a plurality of concave portions). Further, a device isolation layer may be provided to expose upper portions of the plurality of fin portions and to cover top surfaces of the plurality of grooves.

Field effect transistor having fin base and at least one fin protruding from fin base

Mobile phone

Mobile communication terminal

Growing community of inventors

Suwon-si, South Korea

Jaehun Seo