Samsung Electronics Co., Ltd.

Jaehong Min

Sang Woo Lee

Junsoo Kim

Dong-Uk Kim

Jooyoung Hwang

Woo Bin Song

Chankyung Kim

Minhee Cho

Hei Seung Kim

Sangwuk Park

Duckho Bae

Yong In Lee

Ho Young Lee

Ho Dong Lee

Younggeun Choi

A semiconductor device can include a semiconductor substrate and an active region in the semiconductor substrate, where the active region can include an oxide semiconductor material having a variable atomic concentration of oxygen. A first source/drain region can be in the active region, where the first source/drain region can have a first atomic concentration of oxygen in the oxide semiconductor material. A second source/drain region can be in the active region spaced apart from first source/drain region and a channel region can be in the active region between the first source/drain region and the second source/drain region, where the channel region can have a second atomic concentration of oxygen in the oxide semiconductor material that is less than the first atomic concentration of oxygen. A gate electrode can be on the channel region and extend between the first source/drain region and the second source/drain region.

Method of forming a semiconductor device including an active region with variable atomic concentration of oxide semiconductor material

A storage device which is connected to a host using a virtual memory includes a solid state drive that receives a streaming access command including a logical block address (LBA) list and a chunk size, and prefetches stream data requested according to the LBA list and the chunk size from a nonvolatile memory device without an additional command. The prefetched stream data is sequentially loaded onto a buffer, and an in-storage computing block accesses a streaming region registered on the virtual memory to sequentially read the stream data loaded onto the buffer in units of the chunk size. The buffer is mapped onto a virtual memory address of the streaming region.

Storage device processing stream data, system including the same, and operation method

Storage device processing stream data, system including the same, and operation method thereof

Semiconductor device including active region with variable atomic concentration of oxide semiconductor material and method of forming the same

An electronic device includes a storage device including a plurality of doorbell registers; a host configured to perform a first interface operation with the storage device using a first command queue managed by a first doorbell register from among the plurality of doorbell registers; and a third-party device configured to perform a second interface operation with the storage device using a second command queue managed by a second doorbell register from among the plurality of doorbell registers, without an intervention of the host, wherein at least the second doorbell register is allocated as one of one or more dedicated registers for use only with operations of the third-party device.

Storage device and electronic device including the same

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Yongin-si, South Korea

Jaehong Min