Electronics and Telecommunications Research Institute

Jaeheon Shin

Kyung Hyun Park

Sang-Pil Han

Yongsoon Baek

Chul-Wook Lee

Namje Kim

Eundeok Sim

Woo-Seok Cheong

Young Ahn Leem

Chi-Sun Hwang

Kyung Hyun Kim

Dong-Hun Lee

Rae-Man Park

Hyunsung Ko

Sung Mook Chung

Provided are touch screen panels with improved transmittance and methods of fabricating the same. the method may include preparing a substrate including a cell region and an interconnection region provided around the cell region, sequentially forming a first buffer layer and a second buffer layer on the substrate, the second buffer layer having a refractive index less than that of the first buffer layer, and forming a transparent electrode on the second buffer layer. The second buffer layer is formed of a SiOC material.

Touch screen panels and methods of fabricating the same

Touch screen panels are provided. The touch screen panel may include a first hybrid electrode including first electrode cells arranged on a substrate in a first direction and first connection electrodes connecting the first electrode cells to each other in the first direction, and a second hybrid electrode spaced apart from the first hybrid electrode on the substrate. The second hybrid electrode may include second electrode cells arranged in a second direction crossing the first direction and second connection electrodes connecting the second electrode cells to each other in the second direction. The second electrode cells are disposed between the first connection electrodes. The first hybrid electrode may include a first lower transparent layer and a first metal layer which are sequentially stacked, and the second hybrid electrode may include a second lower transparent layer and a second metal layer which are sequentially stacked.

Touch screen panel

Methods of modeling a transistor are provided. The method includes the steps of (a) extracting reference mobility values of a channel layer of a transistor including a gate electrode, a source region and a drain region using a reference gate voltage, a reference drain current and a reference drain voltage, (b) fitting a mobility function including model parameters on the reference mobility values to extract the model parameters, and (c) putting the extracted model parameters into a drain current modeling function to calculate a drain current flowing through the channel layer between the drain region and the source region under a bias condition defined by an arbitrary gate voltage applied to the gate electrode and an arbitrary drain voltage applied to the drain region. Related apparatuses are also provided.

Methods of modeling a transistor and apparatus used therein

Provided is a laser device. In the laser device, an active layer is connected to a stem core of a 1&#xd7;2 splitter on a substrate, a first diffraction grating is coupled to a first twig core of the 1&#xd7;2 splitter, and a second diffraction grating is coupled to a second twig core of the 1&#xd7;2 splitter. An active layer-micro heater is designed to supply heat to the active layer. First and second micro heaters are designed to supply heats to the first and second diffraction gratings, respectively, thereby varying a Bragg wavelength.

Laser device

Provided is a multiple distributed feedback laser device which includes a first distributed feedback region, a modulation region, a second distributed feedback region, and an amplification region. An active layer is disposed on the substrate of the first distributed feedback region, the modulation region, the second distributed feedback region, and the amplification region. A first diffraction grating is disposed in the first distributed feedback region to be coupled to the active layer in the first distributed feedback region. A second diffraction grating is disposed in the second distributed feedback region to be coupled to the active layer in the second distributed feedback region. The multiple distributed feedback laser device further includes a first micro heater configured to supply heat to the first diffraction grating and a second micro heater configured to supply heat to the second diffraction grating.

Multiple distributed feedback laser devices

Provided are an apparatus for generating/detecting terahertz wave and a method of manufacturing the same. The apparatus includes a substrate, a photo conductive layer, a first electrode and a second electrode, and a lens. The photo conductive layer is formed on an entire surface of the substrate. The first electrode and a second electrode formed on the photo conductive layer. The first and second electrodes are spaced from each other by a certain gap. The lens is formed on the first and second electrodes. The lens is filled in the gap between the first and second electrodes.

Apparatus for generating/detecting THz wave and method of manufacturing the same

Provided is a multiple distributed feedback laser device. The laser device includes an active layer, a first diffraction grating, and a second diffraction grating. The substrate includes a first distributed feedback region, a modulation region, and a second distributed feedback region. The first diffraction grating is coupled to the active layer in the first distributed feedback region. The second diffraction grating is coupled to the active layer in the second distributed feedback region. In addition, the laser device includes a first micro heater and a second micro heater. The first micro heater supplies heat to the first diffraction grating. The second micro heater supplies heat to the second diffraction grating. The first micro heater and the second micro heater are controlled independently from each other.

Growing community of inventors

Daejeon, South Korea

Jaeheon Shin