Sandia Corporation

Rensselaer Polytechnic Institute

Samsung Led Co., Ltd.

Jaehee Cho

E Fred Schubert

Martin F Schubert

Mary H Crawford

Daniel D Koleske

Jong Kyu Kim

Sameer Chhajed

Ahmed Noemaun

Di Zhu

Xing Yan

Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

High efficiency III-nitride light-emitting diodes

Image display structures and methods of forming image display structures are provided. The image display structure includes a liquid crystal layer disposed between opposing substrates and first and second transparent electrodes disposed between the liquid crystal layer and the respective opposing substrates. At least one of the first and second transparent electrodes includes a porosity such that a refractive index of the respective transparent electrode is reduced.

Liquid crystal display with refractive index matched electrodes

A light-emitting device including a light source that exhibits polarization anisotropy and a reflector that is shaped so that for light emitted in at least two directions from the light source, the angle between the dominant polarization directions after reflecting from the reflector is smaller than the angle between the dominant polarization directions before reflecting from the reflector. In the light-emitting device the light source may be a light-emitting diode chip or one of a plurality of light sources.

Reflector shapes for light emitting diode-polarized light sources

Growing community of inventors

Troy, NY, United States of America

Jaehee Cho