Lg Electronics Inc.

University-Industry Cooperation Group of Kyung Hee University

Samsung Display Co., Ltd.

Jaegwang Um

Hwankuk Yuh

Sangdae Park

Sungjin Park

Jin Hee Jang

Taewoong Kim

Sunhee Lee

Dohyung Lee

Younggug Seol

Sungguk Lee

Sunghwan Kim

Jin Haeng Jang

Provided is a display device. The display device includes a substrate, a display panel including a display disposed on a front surface of the substrate and a flexible base material extending from the display to surround a portion of each of a side surface and a rear surface of the substrate, and a support layer disposed between the side surface of the substrate and the flexible base material to support the flexible base material. The flexible base material includes: a pair of curved portions spaced apart from the support layer and a side cover portion that is configured to connect the pair of curved portions to each other and is in contact with the support layer.

Display device having support module on side surface of substrate

Discussed is a display device including a substrate, a thin film transistor formed on the substrate, the thin film transistor including a source electrode, a drain electrode, and a gate electrode, and a plurality of semiconductor light emitting devices emitting light so as to each form individual pixels and each having a p-type electrode and an n-type electrode, wherein at least one of the plurality of of the semiconductor light emitting devices is disposed so that one of the p-type electrode and the n-type electrode overlaps the source electrode of the thin film transistor.

Display device using semiconductor light emitting diode and method for manufacturing the same

Discussed is a display device using a semiconductor light emitting diode disposed on a substrate, a planarization layer stacked on the substrate while defining a hole that is a region in which the semiconductor light emitting diode is disposed, a light-transmitting layer filling the hole, and a reflective layer formed along at least one surface of the substrate and the planarization layer defining an inner surface of the hole, wherein the hole is formed so that a width thereof expands as a distance from the substrate increases.

Display device using semiconductor light emitting diode

A thin film transistor substrate and an organic light-emitting diode display including the same are disclosed. In one aspect, the TFT substrate includes substrate and a TFT located on the substrate. The TFT includes a lower gate electrode, a first insulating layer covering the lower gate electrode, an oxide semiconductor layer located on the first insulating layer, a first electrode located on the oxide semiconductor layer and having an island shape, a second electrode located on the oxide semiconductor layer and surrounding the first electrode, a second insulating layer at least partially covering the oxide semiconductor layer; and an upper gate electrode located on the second insulating layer. The oxide semiconductor layer includes a first region, a second region surrounding the first region, and a third region interposed between the first and second regions.

Thin film transistor substrate and organic light-emitting diode display including the same

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Seoul, South Korea

Jaegwang Um