Samsung Electronics Co., Ltd.

Jaegwan Chung

Byounglyong Choi

Eunkyung Lee

Hyangsook Lee

Sung Heo

Jaehak Lee

Gyeongsu Park

Yongsu Kim

Dongjin Yun

Youngnam Kwon

Sunghoon Park

Seong Heon Kim

Woon Jung Paek

A conductor includes a plurality of metal nanostructures and an organic material, where a portion of the organic material surrounding each of the metal nanostructures is selectively removed, and the conductor has a haze of less than or equal to about 1.1, a light transmittance of greater than or equal to about 85% at about 550 nm, and a sheet resistance of less than or equal to about 100 &#x3a9;/sq. An electronic device includes the conductor, and a method of manufacturing a conductor includes preparing a conductive film including a metal nanostructure and an organic material, and selectively removing the organic material from the conductive film using a cluster ion beam sputtering.

Conductor and method of manufacturing the same

Provided are a silica nanowire that includes silicon nanodots and a method of preparing the same. The silica nanowire has excellent capacitance characteristics and improved light absorption ability, and thus can be effectively used in a variety of fields, such as various semiconductor devices including CTF memory, image sensors, photodetectors, light emitting diodes, laser diodes, and the like.

Silica nanowire comprising silicon nanodots and method of preparing the same

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Seoul, South Korea

Jaegwan Chung