Samsung Electronics Co., Ltd.

Jaechul Lee

Junho Lee

Joohwan Kim

Jiwoon Im

Youngjin Jeon

Byungsun Park

Younseok Choi

Youngsub Ko

Daehun Choi

Youngil Lee

Seungjae Sim

A semiconductor device includes: a stepped connection portion having a plurality of conductive pad portions disposed on a substrate; an insulating block covering the plurality of conductive pad portions, wherein the insulating block has a first surface and a second surface, wherein the first surface faces the stepped connection portion, wherein the second surface is flat and extends in a direction parallel to a first surface of the substrate, wherein the insulating block includes a silicon oxide film doped with a dopant element including a metalloid element or a non-metal element, wherein the dopant element has an atomic weight within a range of 5 to 15; and at least one plug structure passing through the insulating block in a vertical direction with respect to the first surface of substrate.

Semiconductor device including a nonvolatile vertical memory device and electronic system including the semiconductor device

An example electronic device may include a memory configured to store instructions and a processor electrically connected to the memory and configured to execute the instructions. When the instructions are executed by the processor, the processor may be configured to generate a first suggested-utterance list providable to a user and generate a second suggested-utterance list by extracting, from the first suggested-utterance list, utterances capable of successful execution for a device registered to the user, according to state information about the registered device.

Electronic device and method for providing list of suggested utterances

A semiconductor device includes a lower memory stack disposed on a substrate and including lower gate electrodes and a lower staircase structure, an upper memory stack including upper gate electrodes and an upper staircase structure, a lower interlayer insulating layer doped with an impurity and covering the lower staircase structure, the lower interlayer insulating layer having a doping concentration gradually increasing toward the lower staircase structure, an upper interlayer insulating layer doped with an impurity and covering the upper staircase structure and the lower interlayer insulating layer, the upper interlayer insulating layer having a doping concentration gradually increasing toward the upper staircase structure and the lower interlayer insulating layer, lower contact plugs and upper contact plugs contacting the lower gate electrodes and the upper gate electrodes, respectively.

Semiconductor device having doped interlayer insulating layer

Growing community of inventors

Hwaseong-si, South Korea

Jaechul Lee