Samsung Electronics Co., Ltd.

Massachusetts Institute of Technology

Jaechul Kim

Yan E Wang

Gerbrand Ceder

Lincoln James Miara

Naoki Suzuki

Tomoyuki Tsujimura

William D Richards

Yuri Masuoka

Seungkwon Kim

Younggun Ko

Chanwook Lee

Disclosed is a semiconductor device comprising a substrate including PMOSFET and NMOSFET regions, first active fins at the PMOSFET region, second active fins at the NMOSFET region, a gate electrode extending in a first direction and running across the first and second active fins, a first source/drain pattern on the first active fins and connecting the first active fins to each other, a second source/drain pattern on the second active fins and connecting the second active fins to each other, a first active contact electrically connected to the first source/drain pattern, and a second active contact electrically connected to the second source/drain pattern. A maximum width of the first active contact in the first direction is less than a maximum width of the second active in the first direction.

Semiconductor device

A solid electrolyte material represented by Formula 1:L(M1)(M2)(M3)&#x2003;&#x2003;Formula 1wherein 0.25&#x3c;x&#x3c;1, L is at least one element selected from a Group 1 element, M1 is at least one element selected from a Group 2 element, a Group 3 element, a Group 12 element, and a Group 13 element, M2 is at least one element selected from a Group 5 element, a Group 14 element, and a Group 15 element, and M3 is at least one element selected from a Group 16 element, and wherein the solid electrolyte material has an I-4 crystal structure.

Solid electrolyte and lithium battery including the same

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Cambridge, MA, United States of America

Jaechul Kim