Samsung Electronics Co., Ltd.

Jaechul Kim

Dongwon Kim

Sanghoon Lee

Jinkyu Kim

Myunggil Kang

Keunhwi Cho

A semiconductor device includes a substrate including a first device region and a second device region, active regions spaced apart from each other on the substrate, having a constant width, extending in a first direction parallel to an upper surface of the substrate and including a first active region and a second active region provided on the first device region and a third active region and a fourth active region provided on the second device region, a plurality of channel layers provided on the active regions and configured to be spaced apart from each other in a direction perpendicular to the upper surface of the substrate, gate structures provided on the substrate and extending to cross the active regions and the plurality of channel layers, and source/drain regions provided on the active regions on at least one side of the gate structures.

Growing community of inventors

Hwaseong-si, South Korea

Jaechul Kim