Samsung Display Co., Ltd.

Jaebum Han

Younggil Park

Sooim Jeong

Nari Ahn

Junghwa Park

Moonsung Kim

Kihyun Kim

Kinam Kim

Sunwoo Lee

Geunhyuk Choi

Bohwa Kim

Seulgi Lee

Jaisun Kyoung

Provided are a display apparatus with improved display quality and a method of manufacturing the same, the display apparatus including: a substrate including a first base layer, a second base layer arranged over the first base layer, and a first barrier layer disposed between the first base layer and the second base layer; a first thin-film transistor arranged over the substrate and including a first semiconductor layer and a first gate electrode, wherein the first barrier layer includes a first sub-layer and a second sub-layer disposed on the first sub-layer, the first sub-layer including an inorganic material and the second sub-layer including amorphous silicon and crystallized silicon.

Display apparatus and method of manufacturing the same

A display panel includes the following elements: a substrate including a first base layer, wherein the first base layer includes a transparent polyimide resin; a first pixel circuit and a second pixel circuit over the substrate, spaced from each other with the transmission area between the first pixel circuit and the second pixel circuit, and each including transistors and a storage capacitor; a first display element electrically connected to the first pixel circuit; and a second display element electrically connected to the second pixel circuit.

Display panel having transmission area between pixel circuits and electronic apparatus including the same

A display device includes: a substrate; a first insulating layer disposed on the substrate and that includes an inorganic insulating material; an oxide semiconductor layer disposed on the first insulating layer; a second insulating layer disposed on the oxide semiconductor layer and that includes an inorganic insulating material; and a third insulating layer disposed on a gate electrode disposed on the second insulating layer and that includes an inorganic insulating material. The oxide semiconductor layer includes a first conductive region, a second conductive region, and a channel region located between the first conductive region and the second conductive region, and a value in the channel region of the oxide semiconductor layer of HC according to equation (1) is less than 30%.

Display device and method of manufacturing display device

An embodiment of a display apparatus includes a substrate, a buffer layer on the substrate, a thin film transistor including a semiconductor layer disposed on the buffer layer and including a silicon semiconductor, and a gate electrode insulated from the semiconductor layer, and an insulating layer covering the semiconductor layer, in which a concentration of fluorine at an interface between the semiconductor layer and the buffer layer is at least 10% of a concentration of the fluorine at the interface between the semiconductor layer and the insulating layer.

Display apparatus having flourine at interfaces of semiconductor layer and manufacturing method thereof

A display apparatus is provided which may include a substrate including a display area and a non-display area adjacent to the display area, a first thin-film transistor disposed on the substrate and including a first semiconductor layer including an oxide semiconductor material, and a second thin-film transistor disposed on the substrate and including a second semiconductor layer including a silicon semiconductor material, wherein a surface roughness of the first semiconductor layer is increased by plasma treatment. A method of manufacturing the display apparatus is also provided.

A display apparatus includes a first silicon transistor including a first semiconductor layer including a silicon-based semiconductor and a first gate electrode; a first oxide transistor including a second semiconductor layer and a second gate electrode, the second semiconductor layer including an oxide-based semiconductor; an upper insulating layer on the first and second semiconductor layers; and a first connection electrode on the upper insulating layer, electrically connected to the first semiconductor layer through a first contact hole of the upper insulating layer, and electrically connected to the second semiconductor layer through a second contact hole of the upper insulating layer. The second semiconductor layer includes a channel region, a source region, and a drain region, and a first distance between the channel region of the second semiconductor layer and the first contact hole is about 2 &#x3bc;m or greater.

Display apparatus

A thin film transistor substrate includes a first semiconductor layer disposed on a substrate and having a first channel area, a first source area and a first drain area. A first gate electrode is disposed above the first semiconductor layer and overlaps the first channel area. A first electrode layer is disposed above the first gate electrode and electrically connects to at least one of the first source area and the first drain area. A second insulating layer is disposed between the first gate electrode and the first electrode layer. The second insulating layer includes an inorganic control layer and a first inorganic layer arranged on the inorganic control layer. The inorganic control layer has a lower density than a density of the first inorganic layer.

Thin film transistor substrate and display apparatus including the same

A display apparatus that includes a substrate, a first thin-film transistor and a second, thin-film transistor disposed on the substrate at different distances from a top surface of the substrate. A display device is electrically connected to the first thin-film transistor. The first thin-film transistor includes a first semiconductor layer in polycrystalline silicon and a first gate electrode that overlaps a channel region of the first semiconductor layer in a direction of a thickness of the substrate. The second thin-film transistor includes a second semiconductor layer including an oxide semiconductor. The first gate electrode has a stacked structure including a first layer and a second layer. The second layer includes titanium and the first layer includes a different material from the second layer.

Growing community of inventors

Yongin-si, South Korea

Jaebum Han