Samsung Electronics Co., Ltd.

Lg Electronics Inc.

Jae Yup Chung

Donghyun Kim

Heedon Jeong

Heesoo Kang

Sanghyuk Hong

Soohun Hong

Han Gyu Cho

Kyu Jin Park

Doo Hyun Sung

Eun Soo Lee

A semiconductor device includes a fin region with long and short sides, a first field insulating layer including a top surface lower than that of the fin region and adjacent to a side surface of the short side of the fin region, a second field insulating layer including a top surface lower than that of the fin region and adjacent to a side surface of the long side of the fin region, an etch barrier pattern on the first field insulating layer, a first gate on the fin region and the second field insulating layer to face a top surface of the fin region and side surfaces of the long sides of the fin region. A second gate is on the etch barrier pattern overlapping the first field insulating layer. A source/drain region is between the first gate and the second gate, in contact with the etch barrier pattern.

Semiconductor device including a three-dimensional channel

Semiconductor device

Method of fabricating semiconductor device including an etch barrier pattern

Semiconductor device and fabricating method thereof

The present invention relates to a handover procedure, and more particularly, to a method of reducing latency in performing handover using fast ranging. The present invention includes the steps of receiving a handover message including a specific ranging code and uplink resource information from a serving base station and transmitting the specific ranging code to a target base station using the uplink information.

Method for reducing handover latency

Growing community of inventors

Yongin-si, South Korea

Jae Yup Chung