Hynix Semiconductor Inc.

Jae Young Park

Ki Hong Lee

Jung Ryul Ahn

Eun Seok Choi

Se Jun Kim

Ki Seon Park

Young Ok Hong

Hyun Seung Yoo

Won Sic Woo

Moon Sig Joo

Kyoung Hwan Park

Kyung Pil Hwang

Myung Shik Lee

Yong Top Kim

A nonvolatile memory device and a method of fabricating the same is provided to prevent charges stored in a charge trap layer from moving to neighboring memory cells. The method of fabricating a nonvolatile memory device, includes forming a first dielectric layer on a semiconductor substrate in which active regions are defined by isolation layers, forming a charge trap layer on the first dielectric layer, removing the first dielectric layer and the charge trap layer over the isolation layers, forming a second dielectric layer on the isolation layers including the charge trap layer, and forming a conductive layer on the second dielectric layer.

Nonvolatile memory device and method of fabricating the same

Growing community of inventors

Icheon-si, South Korea

Jae Young Park