Samsung Electronics Co., Ltd.

Jae-Yoon Kim

Suyeol Lee

Pun Jae Choi

Sangseok Lee

Junghee Kwak

Sungwon Ko

Seungwan Chae

Jeonghwan Jang

Taehun Kim

Sanghyun Kim

Dongyeoul Lee

Sungjoon Kim

Youngkyu Sung

Gamham Yong

Semiconductor light emitting devices and packages are provided. The semiconductor light emitting device includes a substrate, a luminous structure, and first and second electrodes. The substrate has a first region and a second region that is spaced apart in a first direction from the first region. The luminous structure includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked on the substrate. The first electrode is on the second semiconductor layer. The second electrode is electrically coupled to the first semiconductor layer through plural first openings that penetrate the first electrode, the second semiconductor layer, and the active layer, where the first openings expose the first semiconductor layer. The first electrode is in contact with the second semiconductor layer in the first region and in the second region, and the first openings are in the first region.

Semiconductor light emitting device and semiconductor light emitting package

A light emitting device is provided. The light emitting device includes a first semiconductor layer; a second semiconductor layer provided on a bottom surface of the first semiconductor layer; an active layer interposed between the first semiconductor layer and the second semiconductor layer; a dielectric layer provided on a bottom surface of the second semiconductor layer; a plurality of first n-contacts provided on a first etched surface of the first semiconductor layer; and a plurality of first p-contacts and a plurality of second p-contacts provided on the bottom surface of the second semiconductor layer. One first n-contact is disposed along a first edge region of the first semiconductor layer, one first p-contact is closer to the one first n-contact than one second p-contact, and an area of the one first p-contact is greater than an area of each of the second p-contacts.

Light emitting device

A semiconductor light-emitting device includes a light-emitting structure including a first semiconductor layer, an active layer and a second semiconductor layer sequentially stacked. A connection electrode is positioned above the light-emitting structure. The connection electrode includes a connection metal layer electrically connected to at least one of the first and second semiconductor layers. A UBM pattern is on the connection electrode. A connection terminal is on the UBM pattern. The connection metal layer includes a first metal element. A heat conductivity of the first metal element is higher than that of gold (Au). The connection terminal includes a second metal element. A first reactivity of the first metal element with the second metal element is lower than a second reactivity of gold (Au) with the second metal element.

Semiconductor light-emitting device

A multiplier for selectively performing an unsigned magnitude multiplication or a signed magnitude multiplication with a modified Booth algorithm for a multiplication operation. It includes a selection unit which provides an extension bit for performing an unsigned magnitude multiplication in a signed magnitude multiplication which is expressed by a two's complement format, and a partial product generator for performing a sign digit operation increased by the extension bit. It preferably includes a carry look-ahead adder for generating and propagating a look-ahead carry.

Multiplier to selectively perform unsigned magnitude multiplication or

Growing community of inventors

Yongin-si, South Korea

Jae-Yoon Kim