Skhynix Inc.

Jae Yong Cha

Jin Ho Kim

Go Hyun Lee

A semiconductor device includes a common source region formed in a semiconductor substrate, a bit line formed over the semiconductor substrate, first and second vertical channel layers coupled between the bit line and the common source region, wherein the first and second vertical channel layers are alternately arranged on the semiconductor substrate, first conductive layers stacked over the semiconductor substrate to surround one side of the first vertical channel layer, second conductive layers stacked over the semiconductor substrate to surround one side of the second vertical channel layer, and a charge storage layer formed between the first vertical channel layer and the first conductive layers and between the second vertical channel layer and the second conductive layers.

Semiconductor device

A flash memory device is disclosed. The flash memory device includes: a cell array region; an X-decoder region arranged adjacent to the cell array region in a first direction; a discharge transistor region disposed between the cell array region and the X-decoder region; a first metal line formed to pass through the X-decoder region, the discharge transistor region, and the cell array region, and arranged to extend in the first direction; and a second metal line including a first line patterns arranged parallel to the first metal line between the first metal lines, and a second line pattern interconnecting both ends of the first line patterns and extending in a second direction crossing the first direction.

Growing community of inventors

Daejeon, South Korea

Jae Yong Cha