Invisage Technologies, Inc.

Apple Inc.

Jae Y Park

Emanuele Mandelli

Edward Hartley Sargent

Jim Chen Chou

Jess Jan Young Lee

Fei Tan

Christophe Vérove

Athanasios Leontaris

Mark P Rygh

Arnaud Laflaquière

Jaehong Chon

Carey Tanner

The present disclosure is directed towards image processing circuitry that applies temporal filtering to video image data along motion trajectories in the video image data. The temporal filtering may be applied along motion trajectories in the image data, by filtering source pixels by reference pixel values and the refined motion vectors. The temporal filtering circuitry may fetch source and reference pixel values based on received motion vectors from an encoding pipeline. Additionally, the temporal filtering circuitry may include a motion vector refinement block along with a temporal filtering block, such that the video image data may be filtered based on refined motion vectors and source and reference pixel values.

Systems and methods for motion compensated temporal filtering during image processing operations

A video encoding system encodes source image data corresponding with an image includes a low resolution pipeline that receives the source image data corresponding with a first coding block in the image. The low resolution pipeline includes a low resolution motion estimation block programmed to generate a first downscaled coding block by downscaling resolution of the source image data corresponding with the first coding block. The first downscaled coding block comprises a first downscaled prediction block corresponding with a first prediction block in the first coding block. The low resolution pipeline may also perform several low resolution motion estimation searches to generate motion vector candidates. The video encoding system also includes a main pipeline that receives the source image data and determines encoding parameters to be used to encode the first coding block based at least partially on the motion vector candidates.

Systems and methods for low resolution motion estimation searches

An optoelectronic device includes a carrier substrate and a lower distributed Bragg-reflector (DBR) stack disposed on an area of the substrate and including alternating first layers. A set of epitaxial layers disposed over the lower DBR includes a quantum well structure. An upper DBR stack disposed over the set of epitaxial layers includes alternating second layers. Electrodes apply an excitation current to the quantum well structure. At least one of the electrodes includes a metal ring disposed at an inner side of at least one of the DBR stacks in proximity to the quantum well structure. One or more metal vias pass through the at least one of the DBR stacks so as to connect the metal ring at the inner side of the at least one of the DBR stacks to an electrical contact on an outer side of the at least one of the DBR stacks.

VCSEL with integrated electrodes

An optoelectronic device includes a carrier substrate, with a lower distributed Bragg-reflector (DBR) stack disposed on an area of the substrate and including alternating first dielectric and semiconductor layers. A set of epitaxial layers is disposed over the lower DBR, wherein the set of epitaxial layers includes one or more III-V semiconductor materials and defines a quantum well structure and a confinement layer. An upper DBR stack is disposed over the set of epitaxial layers and includes alternating second dielectric and semiconductor layers. Electrodes are coupled to apply an excitation current to the quantum well structure.

Indium-phosphide VCSEL with dielectric DBR

Imaging apparatus () includes a semiconductor substrate () and an array () of pixel circuits (), which are arranged in a matrix on the semiconductor substrate and define respective pixels () of the apparatus. Pixel electrodes () are respectively coupled to the pixel circuits, and a photosensitive () is formed over the pixel electrodes. A common electrode (), which is at least partially transparent, is formed over the photosensitive film. An opaque metallization layer () is formed over the photosensitive film on one or more of the pixels and coupled in ohmic contact to the common electrode. Control circuitry () is coupled to apply a bias to the common electrode via the opaque metallization layer while correcting a black level of the output values from the pixels using the signals received from the one or more of the pixels over which the opaque metallization layer is formed.

Image sensors with metal-covered optical black pixels

Various embodiments include methods and apparatuses for forming and using pixels for image sensors. In one embodiment, an image sensor is disclosed. The image sensor includes an optically sensitive material; a plurality of electrodes proximate the optically sensitive material, including at least a first electrode, a second electrode and a third electrode; and a charge store. The first electrode is coupled to the charge store, and the first electrode and the second electrode are configured to provide a bias to the optically sensitive material to direct photocarriers to the charge store. Other methods and apparatuses are disclosed.

Multi-terminal optoelectronic devices for light detection

In various embodiments, image sensors and methods of making images sensors are disclosed. In an embodiment, an image sensor includes a first pixel region having a pixel electrode, an optically sensitive material of a first thickness, and a counterelectrode. The images sensor also includes a second pixel region comprising a pixel electrode, an optically sensitive material of a second thickness, and a counterelectrode. The first pixel region is configured to detect light in a first spectral band and the second pixel region is configured to detect light in a second spectral band. The first and second spectral bands include an overlapping spectral range. The second spectral band also includes a spectral range that is substantially undetectable by the first pixel region. Other image sensors and methods of making images sensors are also disclosed.

Growing community of inventors

Newark, CA, United States of America

Jae Y Park