Samsung Led Co., Ltd.

Samsung Electronics Co., Ltd.

Lg Innotek Co., Ltd.

Samsung Electro-Mechanics Co., Ltd.

Korea University Research and Business Foundation

Lg Innotek

Jae Woong Han

Seong Suk Lee

Hee Seok Park

Soo Min Lee

Cheol Soo Sone

Chan Keun Park

Hyeong Jun Kim

Jung Hoon Kim

Kwon Jin Kim

Myung Hoon Jung

Kang Hyun Lee

Jong Hun Sung

Woong Il Cho

Doo Ri Kim

Jong Hak Won

Min Ho Kim

Hyo Chan Kwon

Chang Hee Jo

Hyun Chui Lim

Soo Han Kim

Seong Eun Park

Hun Gun Koh

Yul Kwon

An embodiment relates to an ultraviolet light-emitting diode, a method for manufacturing a light-emitting diode, a light-emitting diode package, and a lighting system. The light-emitting diode according to an embodiment includes: a second electrode layer (); a second conductive type AlGaN-based semiconductor layer () on the second electrode layer (); an active layer () on the second conductive type AlGaN-based semiconductor layer (); a current spreading layer () including a first conductive type AlGaN layer (0&#x3c;x&#x2264;&#x2264;0.25) () and disposed on the active layer (); and a first conductive type AlGaN-based semiconductor layer () disposed on the current spreading layer (). A composition x of Al in the first conductive type AlGaN layer (0&#x3c;x&#x2264;&#x2264;0.25) () may be reduced in a direction of the active layer () from the first conductive type first AlGaN-based semiconductor layer ().

Ultraviolet light-emitting device and lighting system

One embodiment relates to a light-emitting device, a method for manufacturing the light-emitting device, a light-emitting device package, and a lighting system. The light-emitting device, according to the one embodiment, can comprise: a first conductive semiconductor layer; an active layer on the first conductive semiconductive layer; a gallium nitride based superlattice layer on the active layer; and a second conductive semiconductor layer on the gallium nitride based superlattice layer. The gallium nitride based superlattice layer can comprise: a first gallium nitride based superlattice layer on the active layer; and a second gallium nitride based superlattice layer on the first gallium nitride based superlattice layer.

Light-emitting device and lighting system

A light emitting device includes a first electrode, a first semiconductor layer disposed on the first electrode and including a first conductive dopant, a second semiconductor layer disposed on the first semiconductor layer and including the first conductive dopant having a doping concentration lower than a doping concentration of the first semiconductor layer, a third semiconductor layer disposed on the second semiconductor layer to adjust stress, a first conductive semiconductor layer on the third semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer; and a second electrode on the second conductive semiconductor layer, the third semiconductor layer has a doping concentration in a range between the doping concentration of the second semiconductor layer and a doping concentration of the first conductive semiconductor layer, and the doping concentration of the third semiconductor layer is increased toward the first conductive semiconductor layer.

Light emitting device and lighting system

A detergent case which includes a liquid detergent accommodation space, a siphon pipe protruded upwardly from a bottom surface of the liquid detergent accommodation space, and a siphon cap surrounding the siphon pipe. The detergent case also includes a remaining water discharge hole formed on a bottom surface of the liquid detergent accommodation space, and an opening and closing unit to open and close the remaining water discharge hole due to buoyancy of a liquid accommodated within the liquid detergent accommodation space.

Detergent case and washing machine having the same

There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.

Nitride semiconductor device

There is provided a nitride semiconductor device including an active layer of a superlattice structure. The nitride semiconductor device including: a p-type nitride semiconductor layer; an n-type nitride semiconductor layer; and an active layer disposed between the p-type and n-type nitride layers, the active layer comprising a plurality of quantum barrier layers and quantum well layers deposited alternately on each other, wherein the active layer has a superlattice structure where the quantum barrier layer has a thickness for enabling a carrier injected from the p-type and n-type nitride semiconductor layers to be tunneled therethrough, and at least one of the quantum barrier layers has an energy band gap greater than another quantum barrier layer adjacent to the n-type nitride semiconductor layer.

Nitride semiconductor device with superlattice active layer including barrier layers with different energy band gaps

A nitride semiconductor device include an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers. The active layer has an alternately-layered structure of a plurality of quantum well layers and a plurality of quantum barrier layers, each alternately stacked on each of the quantum well layers. The alternately-layered structure includes a unit multi-layer structure and a thick quantum barrier well. The unit multi-layer structure includes a first quantum well layer, a second quantum well layer formed, a tunneling quantum barrier layer and a crystal quality-improving layer. The thick quantum barrier well may be formed adjacent to the first and second quantum well layers, with a thickness thereof greater than that of the first and second quantum well layers.

A nitride semiconductor device is provided. In the device, first and second conductivity type nitride layers are formed. An active layer is formed between the first and second conductivity type nitride layers. The active layer includes at least one quantum barrier layer and at least one quantum well layer. Also, a current spreading layer is interposed between the first conductivity type nitride layer and the active layer. The current spreading layer has an In content greater than the quantum well layer of the active layer.

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Seoul, South Korea

Jae Woong Han