Globalwafers Co., Ltd.

Sunedison Semiconductor Limited (uen201334164h)

Sunedison Semiconductor Limited

Jae-Woo Ryu

Carissima Marie Hudson

Soubir Basak

HyungMin Lee

Robert J Falster

Richard Joseph Phillips

Hariprasad Sreedharamurthy

Robert Wendell Standley

Gaurab Samanta

Nan Zhang

Parthiv Daggolu

Eric Michael Gitlin

Young Jung Lee

Byung Chun Kim

Soon Sung Park

Tae Hoon Kim

Jun Hwan Ji

Kirk D McCallum

Methods for forming single crystal silicon ingots with improved resistivity control and, in particular, methods that involve gallium or indium doping are disclosed. In some embodiments, the ingots are characterized by a relatively high resistivity.

Methods for forming single crystal silicon ingots with improved resistivity control

A method for growing a single crystal silicon ingot by the continuous Czochralski method is disclosed. The melt depth and thermal conditions are constant during growth because the silicon melt is continuously replenished as it is consumed, and the crucible location is fixed. The critical v/G is determined by the hot zone configuration, and the continuous replenishment of silicon to the melt during growth enables growth of the ingot at a constant pull rate consistent with the critical v/G during growth of a substantial portion of the main body of the ingot. The continuous replenishment of silicon is accompanied by periodic or continuous nitrogen addition to the melt to result in a nitrogen doped ingot.

Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski method

Single crystal silicon ingot having axial uniformity

The disclosure is directed to a method to recover the gate oxide integrity yield of a silicon wafer after rapid thermal anneal in an ambient atmosphere comprising a nitrogen containing gas, such as NHor N. Generally, rapid thermal anneals in an ambient atmosphere comprising a nitrogen containing gas, such as NHor Nto thereby imprint an oxygen precipitate profile can degrade the GOI yield of a silicon wafer by exposing as-grown crystal defects (oxygen precipitate) and vacancies generated by the silicon nitride film. The present invention restores GOI yield by stripping the silicon nitride layer, which is followed by wafer oxidation, which is followed by stripping the silicon oxide layer.

Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yield

An method for producing a silicon ingot includes melting polycrystalline silicon in a crucible enclosed in a vacuum chamber to form a melt, generating a cusped magnetic field within the vacuum chamber, dipping a seed crystal into the melt, withdrawing the seed crystal from the melt to pull a single crystal that forms the silicon ingot, wherein the silicon ingot has a diameter greater than about 150 millimeters (mm), and simultaneously regulating a plurality of process parameters such that the silicon ingot has an oxygen concentration less than about 5 parts per million atoms (ppma). The plurality of process parameters include a wall temperature of the crucible, a transport of silicon monoxide (SiO) from the crucible to the single crystal, and an evaporation rate of SiO from the melt.

Methods for producing low oxygen silicon ingots

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Chesterfield, MO, United States of America

Jae-Woo Ryu