Hyundai Motor Company

Skhynix Inc.

Osong Medical Innovation Foundation, Korea University Research and Business Foundation

Ulsan National Institute of Science and Technology

Kia Motors Corporation

Seohan Industry Co., Ltd.

Yonsei University

Samsung Medison Co., Ltd.

Korea Institute of Energy Research

Research Triangle Institute

Innowireless Co., Ltd.

Chungbuk National University Industry-academic Cooperation Foundation

Microinspection, Inc.

Korea Sintered Metal Co., Ltd.

Samsung Electronics Co., Ltd.

Jae Woo Lee

Yoon Cheol Kim

Jae Young Lee

Sun Ho Choi

Soo Hyun Kim

Ki Bum Kim

Dong Hyun Kim

Dong Jun Lee

Byong Min Kang

Kee Chang Lee

Jai Min Han

Jung Hwan Ji

Jin Gee Park

Jung Hoon Cheon

Sung Soo Kim

Jinsoup Joung

Byung Chan Lee

Sung Do Kwon

Min Gyun Chung

Jung Soon Shin

Seon Woo Hwang

Hyun Dal Park

Yoon Joo Rhee

Seung Hwan Ji

Jin Ho Gu

Shin Gyu Kim

Sichen Du

Jae Min Han

Kyoung Don Yi

Jun Ho Seo

Dan Dan Dong

Ou Kyung Choi

Hyun Seok Lee

Tak Eun

Joo Beom Kim

Jae Ryung Lee

Seung Han Park

Sung Kweon Jang

Dae Ho Yun

O Sung Kwon

Jae Seok Lee

Kun Min Park

Ki Jung Kim

Kyeong Min Ha

Sung Tae Choi

Gyeong Su Kim

Eui Jun Kim

Jun Wan Park

Da Hwan Park

Joong Hyun Park

Soo Hyuk Lee

Young Cheol Chae

Jong Kwan Park

Gwang Yun Kim

Taeg Jo Kim

Gyu Dong Kim

Sung-Ah Park

Young Chul Choi

Hak-Il Kang

Xin Zhao

Sae Yan Choi

Byung Soo Yoo

Geun Soo Yang

Tae Ho Jung

Sang Do Kwak

Seung Hyun Lee

Cheol Ki Kim

Jee Ho Park

Dong Geun Park

Jung Chun Kim

Joon-Ho Oh

Ka-Hyun Kim

Disclosed are a method of forming a contact structure, a method of fabricating a semiconductor device, a contact structure, and a semiconductor device including the same. A method of forming a contact structure may comprise forming a porous silicon layer on a substrate by using an epitaxy process, forming a dielectric layer on the porous silicon layer, forming a metal layer on the dielectric layer, forming a silicide member having a three-dimensional structure in the porous silicon layer by diffusing metal atoms of the metal layer into the porous silicon layer through the dielectric layer and reacting the diffused metal atoms with the porous silicon layer in a heat treatment process, removing the metal layer and the dielectric layer, and forming a conductive layer in contact with the silicide member.

Method of forming contact structure, method of fabricating semiconductor device, contact structure and semiconductor device including the same

The present invention relates to a silicon oxide preparation method and a preparation device thereof, and more particularly, to a silicon oxide preparation method capable of continuously preparing silicon oxide by a liquid phase-solid phase reaction by introducing a silicon-based molded body into silicon molten metal, and a preparation device thereof.

Device and method of preparing siox, and siox anode material

Provided is a desalination device using a solvent extraction method, comprising: a first mixing tank composed of a feed water inlet into which feed water comprising salt ions and water molecules flows, a first solvent inlet into which a first solvent selectively reacting more with the water molecules than with the salt ions flows, a first mixing tank body in which the feed water and the first solvent are mixed so as to form a mixed water, and a mixed water outlet through which the mixed water is discharged; a first separation tank composed of a mixed water inlet which communicates with the mixed water outlet so that the mixed water flows therein, a first separation tank body in which brine containing salt ions of the feed water and first treatment water formed from mixing the water molecules of the feed water and the first solvent of the mixed water are separated by layer, and a first treatment water outlet through which the first treatment water is discharged; a second mixing tank composed of a first treatment water inlet which communicates with the first treatment water outlet so that the first treatment water flows therein, a second solvent inlet into which a second solvent selectively reacting more with the first solvent than with the water molecules of the treatment water flows, a second mixing tank body in which the first treatment water and the second solvent are mixed so as to form second treatment water, and a second treatment water outlet through which the second treatment water is discharged; and a second separation tank composed of a second treatment water inlet which communicates with the second treatment water outlet so that the second treatment water flows therein, a second separation tank body in which the water molecules of the first treatment water and a composite solvent formed from mixing the first solvent of the first treatment water and the second solvent of the second treatment water are separated by layer, and a fresh water outlet through which fresh water composed of the water molecules is discharged.

Desalination device using solvent extraction method, and desalination method using same

A negative electrode material for a secondary battery includes a matrix containing silicon oxide, a composite oxide of one or more doping elements selected from the group consisting of an alkali metal, an alkaline earth metal, and a post-transition metal, and silicon, or a mixture thereof; and silicon nanoparticles dispersed and embedded in the matrix; wherein a hardness and a Young's modulus measured by a nanoindentation test are 4.0 GPa or more and 40 GPa or more, respectively, and in an X-ray diffraction pattern using a CuKα ray, a ratio (A/A) of an area (A) of a first peak present in a region where a diffraction angleθ is 10° to 27.4° to an area (A) of a second peak present in a region where the diffraction angleθ is 28±0.5° is 0.8 to 6.

Negative electrode material for secondary battery

Candle warmer

In an embodiment, an error correction code circuit is provided. The error correction code circuit includes an error correction code engine and data processing circuit. The error correction code engine is configured to generate a second parity signal and syndrome information by performing an operation on operation source data and a first parity signal. The data processing circuit is configured to output write data as the operation source data and output an internally generated dummy parity signal as the first parity signal during a write operation, and to output read data as the operation source data and output a read parity signal as the first parity signal during a read operation.

Error correction code circuit and semiconductor apparatus including the error correction code circuit

A negative electrode material for a secondary battery includes a matrix containing silicon oxide, a composite oxide of one or more doping elements selected from an alkali metal, an alkaline earth metal, and a post-transition metal, and silicon, or a mixture thereof; and silicon nanoparticles dispersed and embedded in the matrix.

The present technology may include an error correction code engine configured to generate a parity bit and syndrome information by performing an operation according to operation source data, and a data processing circuit configured to simultaneously output the parity bit and first delay data, which is generated by delaying input data by a first time according to a write operation, simultaneously output the syndrome information and second delay data, which is generated by delaying input data by a second time according to a read operation, and to share substantially the same signal path in generating the first delay data and in generating the second delay data.

Error correction code circuit and semiconductor apparatus including the same

The present technology may include a first storage circuit connected to a plurality of memory banks, an error correction circuit, a read path including a plurality of sub-read paths connected between the plurality of memory banks and the error correction circuit, and a control circuit configured to control data output from the plurality of memory banks to be simultaneously stored in the first storage circuit by deactivating the read path during a first sub-test section, and to control the data stored in the first storage circuit to be sequentially transmitted to the error correction circuit by sequentially activating the plurality of sub-read paths during a second sub-test section.

Semiconductor apparatus related to a test function

Disclosed is a desalination apparatus using a solvent extraction scheme. The desalination apparatus using a solvent extraction scheme includes a source water supply module configured to supply source water including salt of a first concentration and water, a functional solvent supply module configured to supply a functional solvent, of which the solubility in water varies according to temperature, a mixing module configured to mix the source water from the source water supply module and the functional solvent from the functional solvent supply module, a first separation module configured to receive mixture water, in which the source water and the functional solvent are mixed, from the mixing module, and dissolve the water contained in the source water in the functional solvent, a salt crystallization module configured to receive the source water including salt of a second concentration that is higher than the first concentration, from which the water has been removed, from the first separation module, and a second separation module configured to receive the functional solvent, in which the water has been dissolved, from the first separation module, and thermally separate the water and the functional solvent at a second temperature that is higher than the first temperature.

Desalting apparatus using solvent and the method thereof

A pixel circuit for background light suppression includes: a 2-tap pixel circuit including first and second pixel capacitors, first and second storage switches, and first and second transfer switches; an in-pixel sigma delta circuit including a plurality of switching switches and a storage capacitor for storing charge transferred from the first and second pixel capacitors; an adaptive sigma delta controller configured to determine switching states of the plurality of switching switches according to a first state of the first pixel capacitor, or a second state of the second pixel capacitor, or both; and a chopping controller configured to instruct the storage switches and the transfer switches of the 2-tap pixel circuit to be selectively switched according to an output of the adaptive sigma delta controller.

I-TOF pixel circuit for background light suppression

Disclosed is a low power modulator with a VCO quantizer. The low power modulator with the VCO quantizer may include an integrator converting an input current to a voltage, a quantizer converting the converted voltage to digital information, a filter unit filtering the converted digital information, a DAC converting the filtered digital information into a feedback current, and a controller calculating the digital information output based on a difference value between the input current and the feedback current for each sampling time.

Low power modulator with VCO quantizer

A method for measuring interference in a memory device is provided. The method includes: programming a selected memory cell among a plurality of memory cells connected in series between a bit line and a source line; measuring a first noise value of the programmed selected memory cell; programming an adjacent memory cell adjacent to the selected memory cell among the plurality of memory cells; measuring a second noise value of the selected memory cell, after the programming of the adjacent memory cell is completed; and determining interference on the selected memory cell based on the first noise value and the second noise value. The first noise value and the second noise value are measured by detecting a low frequency noise of a cell current of the selected memory cell.

Method for measuring interference in a memory device

Disclosed are a lidar sensor for vehicles and a method of operating the same. In accordance with an embodiment of the present disclosure, the lidar sensor may include a first sensor configured to measure a distance to a target; and a second sensor configured to control output of a transmission signal considering the measured distance and measure a front including the target using the controlled transmission signal in high resolution.

Lidar sensor for vehicles and method of operating the same

A semiconductor device including a test circuit is disclosed. The semiconductor device includes a test pad coupled to a probe of a test device during a wafer test; a normal pad configured to receive a power or a signal during a normal mode; and a test circuit configured to perform a predetermined test operation based on a test signal received through the test pad. The test circuit is disposed below the normal pad.

Semiconductor device including test circuit

Growing community of inventors

Gyeonggi-Do, South Korea

Jae Woo Lee