Samsung Display Co., Ltd.

Dongwoo Fine-chem Co., Ltd.

Jae-Woo Jeong

Jong-Hyun Choung

In-Bae Kim

Seon-Il Kim

Hong-Sick Park

Young-Chul Park

In-Ho Yu

Suck-Jun Lee

Young-Jin Yoon

Wang Woo Lee

Sang-tae Kim

Ji-Young Park

Sang-Hoon Jang

Joon-Woo Lee

Young-Jun Jin

In Seol Kuk

Keyong Bo Shim

Sang-Gab Kim

Sang Gab Kim

Sang-woo Kim

Ki-beom Lee

Sam-Young Cho

Dae-woo Lee

Gi-Yong Nam

In-Seol Kuk

A etchant composition that includes, based on a total weight of the etchant composition, about 0.5 wt % to about 20 wt % of a persulfate, about 0.5 wt % to about 0.9 wt % of an ammonium fluoride, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 10.0 wt % of a sulfonic acid, about 5 wt % to about 10 wt % of an organic acid or a salt thereof, and a remainder of water. The etchant composition may be configured to etch a metal layer including copper and titanium, to form a metal wire that may be included in a thin film transistor array panel of a display device.

Etchant composition and method of forming metal wire and thin film transistor array panel using the same

An etchant composition includes about 0.5 weight % to about 20 weight % of persulfate, about 0.01 weight % to about 2 weight % of a fluoride compound, about 1 weight % to about 10 weight % of an inorganic acid, about 0.5 weight % to about 5 weight % of a cyclic amine compound, about 0.1 weight % to about 10.0 weight % of a compound having an amino group and a sulfonic acid, about 0.1 weight % to about 15.0 weight % of an organic acid or a salt thereof, and water to 100 weight % of the etchant composition.

Etchant composition and method of manufacturing metal wiring and thin film transistor substrate using the etchant

An etching composition, a method of forming a metal pattern using the etching composition, and a method of manufacturing a display substrate are disclosed. The etching composition includes about 0.1% by weight to about 25% by weight of ammonium persulfate, about 0.1% by weight to about 25% by weight of an organic acid, about 0.01% by weight to about 5% by weight of a chelating agent, about 0.01% by weight to about 5% by weight of a fluoride compound, about 0.01% by weight to about 5% by weight of a chloride compound, about 0.01% by weight to about 2% by weight of an azole-based compound and a remainder of water. Thus, a copper layer may be stably etched to improve a reliability of manufacturing the metal pattern and the display substrate.

Etching composition, method of forming a metal pattern using the etching composition, and method of manufacturing a display substrate

A method of forming a metal pattern on a display substrate includes blanket depositing a copper-based layer having a thickness between about 1,500 &#x212b; and about 5,500 &#x212b; on a base substrate, and forming a patterned photoresist layer on the copper-based layer. The copper-based layer is over-etched by an etching composition containing an oxidizing moderating agent where the over-etch factor is between about 40% and about 200% while using the patterned photoresist layer as an etch stopping layer, and where the etching composition includes ammonium persulfate between about 0.1% by weight and about 50% by weight, includes an azole-based compound between about 0.01% by weight and about 5% by weight and a remainder of water. Thus, reliability of the metal pattern and that of manufacturing a display substrate may be improved.

Method of forming a metal pattern and method of manufacturing a display substrate including the metal pattern

Growing community of inventors

Incheon, South Korea

Jae-Woo Jeong