Samsung Display Co., Ltd.

Enf Technology Co., Ltd.

Jae Woo Jeong

Jong Oh Seo

Hong Sick Park

Byung Soo So

Jang Hyun Kim

In Cheol Ko

Young Jin Park

Jong-Hyun Choung

Joo Hyung Lee

Ki-beom Lee

In-Bae Kim

Hiroshi Okumura

Sam-Young Cho

Jong Hoon Choi

Seung Ho Yoon

Dong Il Kim

Bong Kyun Kim

Jong Jun Baek

Gyu-po Kim

Won-guk Seo

Hyun-cheol Shin

Seung-yeon Han

Seon-II Kim

Hyo Won Park

Sang Moon Yun

Sang Dai Lee

A transistor substrate includes a substrate, a semiconductor layer overlapping the substrate, and a gate electrode overlapping the semiconductor layer. The semiconductor layer includes a channel unit, a conductive unit directly connected to an end of the channel unit, and an edge unit positioned at an edge of the conductive unit. A carbon concentration of the edge unit is higher than each of a carbon concentration of the channel unit and a carbon concentration of the conductive unit.

Thin film transistor array substrate including edge region capping conductive region

A display device includes: a substrate; a semiconductor layer on the substrate, and including a channel of at least one transistor; a first insulating layer on the semiconductor layer; and a gate electrode on the first insulating layer. The semiconductor layer includes polycrystalline silicon, and the channel includes: a first region containing a first impurity; and a second region containing a second impurity different from the first impurity.

Display device and method of fabricating the same

A display device includes a substrate, a semiconductor layer, an insulating layer, and a conductive layer. The semiconductor layer is disposed on the substrate, includes a channel of a first transistor, and includes a channel of a second transistor. The insulating layer is disposed on the semiconductor layer. The conductive layer is disposed on the insulating layer, includes a gate electrode of the first transistor, and includes a gate electrode of the second transistor. The channel of the first transistor includes a first first-element impurity ion and a second-element impurity ion different from the first first-element impurity ion. The channel of the second transistor includes a second first-element impurity ion identical to the first first-element impurity ion.

Display device and method of manufacturing the same

An annealing apparatus includes: a main body configured to receive a substrate; a microwave generating unit configured to generate microwaves to be transmitted to the main body; an incidence unit configured to transmit the microwaves from the microwave generating unit to the main body; and a diffraction unit disposed between the incident unit and the main body. The diffraction unit is configured to pass the microwaves therethrough before they are transmitted to the main body.

Annealing apparatus

A touch sensor according to an exemplary embodiment includes: a substrate; a first sense electrode that is disposed on the substrate and extends in a first direction; a first insulation layer that covers the substrate and the first sense electrode; and a second sense electrode that is disposed in the first insulation layer and extends in a second direction that crosses the first direction, wherein an upper surface of the second sense electrode is disposed on the same plane as an upper surface of the first insulation layer.

Touch sensor and manufacturing method thereof, and display device including the same

A thin film transistor array panel including: a substrate; a semiconductor layer disposed on the substrate; a source electrode and a drain electrode overlapping the semiconductor layer, and a gate electrode overlapping the semiconductor layer; and a first ohmic contact disposed between the semiconductor layer and the source electrode and a second ohmic contact disposed between the semiconductor layer and the drain electrode. The semiconductor layer includes a channel part that does not overlap the source electrode and the drain electrode. The first ohmic contact includes a first edge and the second ohmic contact includes a second edge. The first and second edges face each other across the channel part of the semiconductor layer. The first edge of the first ohmic contact is protruded from the source electrode toward the channel part and the second edge of the second ohmic contact is protruded from the drain electrode toward the channel part.

Thin film transistor array panel and a method for manufacturing the same

Provided is a method for manufacturing a glycol based compound. The method comprises agitating a mixture of a first glycol based compound, a hydrazide based compound, and a sulfonic acid based compound, and performing fractional distillation of resultant materials of the agitating to recover a second glycol based compound having a formaldehyde content of 0 ppm.

Method for manufacturing high purity glycol based compound

Provided is a manufacturing method of a thin film transistor array panel including: formation of a gate line including a gate electrode on a substrate; formation of sequentially a gate insulating layer, an active layer, a data metal layer, and a photoresist etching mask pattern on the gate line; etching the data metal layer with the same shape as the photoresist etching mask pattern; etching the active layer by using the photoresist etching mask pattern; formation of a data line including a source electrode and a drain electrode for completing a channel region on the active layer; and formation of a pixel electrode exposing the drain electrode and electrically connected with the drain electrode, in which in the etching of the active layer, a dry-etch process is performed by using gas including at least one of NF3 and H2.

Manufacturing method of thin film transistor display panel

A metal wire etchant including persulfate, a sulfonate, a fluorine compound, an azole-based compound, an organic acid, a nitrate, and a chlorine compound, and a method of making the same.

Metal wire etchant and method of forming metal wire using the same

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Suwon-si, South Korea

Jae Woo Jeong