Skhynix Inc.

Jae Won Lee

Hyung June Yoon

Hoon Moo Choi

Jae Hyung Jang

Jong Chae Kim

Jong Eun Kim

Dong Jin Lee

Nam Il Kim

Ho Young Kwak

An image sensing device is provided to include: a substrate having a first surface on which light is incident and a second surface facing the first surface; a plurality of detection structures, each comprising a control node configured to exhibit a conductivity type and generate a potential gradient in the substrate, and a detection node configured to capture photocharge which is generated in response to incident light and migrates in response to the potential gradient; and a first well area disposed to abut the control nodes of the plurality of detection structures and containing an impurity with a different conductivity type from the conductivity type of the control nodes.

Image sensing device

An image sensing device is provided to include a pixel array having a plurality of pixels arranged in a matrix shape. Each of the pixels includes: a control node configured to generate a hole current in a substrate; a detection node configured to capture photocharge migrated by the hole current, formed in a shape whose at least part is partially open, and disposed to surround the control node, and a low resistance region including a dielectric layer formed in the substrate, and disposed in the opening on of the detection node. The low resistance region includes an inner low resistance region disposed between the control node and the center of the pixel.

An image sensing device includes a substrate including a front side and a back side that are opposite to each other, wherein the image sensing device is structured to operate by receiving incident light through the back side of the substrate; a depletion region disposed in the substrate to be in contact with the back side of the substrate; an epitaxial layer disposed in the substrate to be in contact with or near the front side of the substrate; and a plurality of detection structures disposed in the epitaxial layer, each configured to capture photocharge generated by incident light and move by a current flowing in the epitaxial layer.

An image sensing device may include a pixel array. The pixel array includes a sensing region including a plurality of unit pixels, each unit pixel configured to detect incident light to generate photocharge indicative of the detected incident light, a bias field region doped with impurities and disposed along an edge of the sensing region and a contact portion connected to the bias field region to apply a bias voltage to the bias field region to move the photocharge in the sensing region.

An image sensor includes a color sensor chip configured to generate a color image by sensing visible light in incident light; a light transfer layer disposed under the color sensor chip, and including an infrared light pass filter which filters infrared light from light having passed through the color sensor chip; and a depth sensor chip disposed under the light transfer layer, and configured to generate a depth image by sensing the infrared light.

Image sensor

The image sensing device includes a pixel array including a plurality of unit pixels arranged in columns and rows. Each unit pixel includes a photoelectric conversion element, circulation gates, transfer gates, and drain nodes. The photoelectric conversion element generates photocharges by performing photoelectric conversion of incident light. The circulation gates are located at sides of the photoelectric conversion element, receive circulation control signals and move the photocharges within the photoelectric conversion element in a predetermined direction based on the circulation control signals. The transfer gates are respectively located between two adjacent circulation gates, receive a transfer control signal and transmit the photocharges to a floating diffusion region based on the transfer control signal. The drain nodes are located at sides of the circulation gates that are opposite to the photoelectric conversion element, and receive a drain voltage. The drain nodes include a first drain node that is shared by two adjacent unit pixels arranged in the first direction and a second drain node that is shared by the two adjacent unit pixels arranged in the second direction.

An image sensor includes a pixel group comprising a plurality of photodiodes configured to produce photocharges produced in response to light incident on the plurality of photodiodes, a floating diffusion region configured to receive and accumulate the photocharges produced by the plurality of photodiodes, a plurality of transfer transistors coupled to the plurality of photodiodes, respectively, each of the plurality of transfer transistors configured to transfer the photocharges produced by the corresponding photodiode, and a common transfer transistor coupled between the plurality of transfer transistors and the floating diffusion region and configured to transfer the photocharges produced by the plurality of photodiodes to the floating diffusion region.

Growing community of inventors

Icheon-si, South Korea

Jae Won Lee