Dongbu Electronics, Co. Ltd.

Lg Display Co., Ltd.

Dongbu Hitek Co., Ltd.

Dongbu Anam Semiconductor, Inc.

Other

Skhynix Inc.

Jae-Won Han

Soon-Dong Cho

Jung-Jae Kim

Dong-Won Park

Min-Gyu Park

Hyun-Seok Kim

Dong-Ju Kim

Jun-Hyeok Yang

Hyung-Jin Choe

Chang-Soo Ha

Jun-O Hur

Dong-Ki Jeon

A display device includes a display panel including pixels, and data lines and gate lines connected to the pixels, a timing controller configured to output source driving bit information and gate driving bit information through an intra-interface signal, a source driver configured to generate data driving signal based on the source driving bit information and to supply the data driving signal to the data lines, and a gate driver configured to generate a gate driving signal based on the gate driving bit information and to supply the gate driving signal to the gate lines, wherein the intra-interface signal is configured with predetermined data transmission units and includes both the source driving bit information and the gate driving bit information every 1 data transmission unit.

Display device with intra-interface for simple signal transmittal path

A chip on film and a display device including the same selectively outputs gate transmission signals and data outputs to reduce the number of output pads in a data driving IC. The COF includes first to third groups of data input pads, gate input pads, and output pads. A data driving IC includes first to third groups of output buffers, a first switchable output unit configured to selectively supply gate transmission signals and an output of the first group of output buffers to the first group of output pads, and a second switchable output unit configured to selectively supply the gate transmission signals and an output of the third group of output buffers to the third group of output pads. An output of the second group of output buffers is supplied to the second group of output pads between the first and the third groups of output pads.

Chip on film and display device including the same

Disclosed herein are a display device capable of reducing the number of transmission lines by enabling a master circuit to perform communication with a plurality of slave circuits, which utilize different interfaces, through a common transmission line in a time divisional manner, and an interface method thereof. A timing controller uses a common transmission line of a gamma voltage generator and a level shifter which respectively utilize first and second interfaces and perform communication using the first and second interfaces in a time divisional manner.

Display device and interface method thereof

A memory module includes: a plurality of first memory ranks that belong to a first group; a plurality of second memory ranks that belong to a second group; and a rank mapping circuit suitable for mapping a defective first memory rank among the first memory ranks to a defect-free second memory rank among the second memory ranks.

Memory module

Disclosed is checking a drive state of a backlight lamp of a liquid crystal display device and notifying to an external entity whether it is normally driven in which level or is difficult to be normally driven. The apparatus for displaying a drive state of a backlight in a liquid crystal display device includes an inverter for converting an inputted DC voltage into an AC voltage of a certain level, and outputting the same to a backlight lamp; a drive voltage detecting unit for detecting a drive voltage supplied to the backlight lamp from the inverter and outputting a detected signal according to the detected drive voltage; a drive current detecting unit for detecting a tube current of the backlight lamp and outputting a detected signal according to the detected tube current; a drive voltage control/drive state signal output unit for checking a drive state of the backlight lamp based on the two detected signals, and controlling the drive voltage outputted from the inverter based on the checked result as well as outputting a drive state signal for indicating the drive state; and a lamp drive state indicating unit for indicating in which drive state the backlight lamp is driven according to the drive state signal.

Apparatus and method for displaying drive state of backlight in liquid crystal display device

A semiconductor device that allows an image sensor (in an upper area of a SiP semiconductor device) to exchange signals with a device in a lower area of a SiP semiconductor device. A semiconductor device includes at least one of: A semiconductor substrate having a photodiode area and a transistor area. A PMD (Pre Metal Dielectric) layer formed on and/or over the semiconductor substrate. At least one metal layers formed on and/or over the PMD layer. A first penetrating electrode penetrating the PMD layer and the at least one metal layers. A second penetrating electrode penetrating the semiconductor substrate and connected to the first penetrating electrode.

Semiconductor device and fabricating method thereof

A semiconductor device is provided. The semiconductor device includes a semiconductor substrate including a conducting layer, a first insulating film formed on the semiconductor substrate and having a via hole formed therein, a lower barrier film formed on an inside wall of the via hole, a first metal wiring formed on the lower barrier film, a second insulating film formed on the first metal wiring and the first insulating film, the second insulating film being provided with a trench which has a width greater than a width of the via hole, an upper barrier film formed on a lower surface of the trench, a second metal wiring formed on the upper barrier film, and a sidewall barrier film formed on sidewalls of the upper barrier film and the second metal wiring. The sidewall barrier film has an L-shaped mirror-symmetrical structure.

Formation of interconnects through lift-off processing

A semiconductor device according to embodiments may include an interposer, a plurality of devices stacked on the interposer, a cooling device provided in at least one of the devices and including a passage for a cooling material, and a connection electrode provided between the devices, in which the connection electrode connects a signal electrode in an upper device to a signal electrode in a lower device.

Semiconductor device

Rapid thermal processing apparatus methods are disclosed. In a disclosed apparatus, rapid thermal processing is carried out when the residual oxygen detected by a residual oxygen detector does not exceed a predetermined tolerance level. Accordingly, it is possible to prevent the contact resistance of the wafers from increasing due to the presence of excessive oxygen.

Rapid thermal processing apparatus and methods

A method for manufacturing an inductor using a system-in-package (SIP) includes forming a first penetration electrode in a silicon substrate; depositing an insulating film on a first surface of the silicon substrate, and patterning the insulating film to form an inductor hole and a second penetration hole aligned with the first penetration hole; forming an inductor in the inductor hole and a second penetration electrode in the second penetration hole; and depositing a protective film on the insulating film and performing a back grind process such that the first penetration electrode is exposed from a second surface of the silicon substrate, the second surface being opposed to the first surface.

Method of manufacturing inductor

A method for fabricating copper wiring of a semiconductor device comprises forming a deposition stop time detection pattern having two trench structures positioned with a predetermined distance from each other on a dielectric substrate; positioning a deposition stop time detection apparatus having a plurality of detection electrodes and a guide device above the deposition stop time detection pattern; depositing copper on the substrate; and stopping deposition of the copper by an electric signal being generated when the two detection electrodes are electrically connected by the copper deposited in the two trench structure.

Deposition stop time detection apparatus and methods for fabricating copper using the same

The method for forming a metal line stacking structure according to a preferred embodiment of the present invention comprises: sequentially forming a first barrier metal and a first metal layer on a lower dielectric layer that is disposed over a semiconductor substrate, and performing a plasma treatment; forming a second barrier metal on the plasma-treated first metal layer; selectively etching the second barrier metal, the first metal layer, and the first barrier metal to form a metal line layer including the second barrier metal, the first metal layer, and the first barrier metal, which respectively have a predetermined width; and sintering the metal line layer to raise a reaction between the first metal layer and the second barrier metal, thereby generating a metal compound layer.

Method of forming metal line stacking structure in semiconductor device

For a semiconductor device having copper wiring, an exemplary method according to an embodiment of the present invention may include forming a first insulation layer on a silicon substrate having a transistor thereon; forming a contact hole by etching the first insulation layer; forming a metal plug so as to fill the contact hole; forming a second insulation layer on the metal plug; forming a trench exposing an upper surface of the metal plug by partially removing the second insulation layer; sputter-etching an interior wall and bottom surface of the trench with a plasma; and forming a copper line layer so as to fill the sputter-etched trench. According to this method, electrical contact between a metal plug and a copper line layer may be maintained or improved prevented by reducing or removing by-products on the metal plug using the sputter-etching process.

Method of manufacturing a semiconductor device

The present invention is directed to a method of manufacturing silicide used to reduce a contact resistance at a contact of a semiconductor device and a semiconductor device with the silicide manufactured by the same method. The method comprises the steps of: (a) cleaning a semiconductor substrate with a transistor formed thereon, the transistor including a source electrode, a drain electrode and a gate electrode; (b) placing the cleaned semiconductor substrate into a sputter chamber in a deposition equipment, and forming silicide at the same time of depositing a metal film under a state where the semiconductor substrate is heated at a temperature of 450-600&#xb0; C.; (c) removing residual metal film not used for the formation of silicide; and (d) annealing the semiconductor substrate. According to the present invention, since silicide is formed at the same time of depositing a cobalt film, there is an advantage of omission of a protection film formation process over the prior arts where silicide is formed by a post-heat treatment.

Growing community of inventors

Bucheon, South Korea

Jae-Won Han