Hyundai Electronics Industries Co. Ltd.

Jae Wan Ko

Woo Bong Lee

Tae Jung Yeo

Yung M Koo

Se Jun Oh

An electrostatic discharge (ESD) protecting transistor and a method for fabricating the same, capable of consuming a high voltage or overcurrent applied to a semiconductor circuit device and thereby protecting the circuit device from the high voltage or overcurrent. The ESD protecting transistor is of an asymmetric charge coupled MOS transistor structure having a highly doped buried layer capable of dispersing a current flux, thereby removing an instant ESD impact and reducing generation of heat caused by a concentration of high current flux. Accordingly, an effect of improving the resistance characteristic to the ESD impact is provided.

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Bubaleub, South Korea

Jae Wan Ko