Samsung Electronics Co., Ltd.

Jae-wan Chang

Sun-Min Moon

Jae-hyoung Choi

Youn-soo Kim

Jin-sun Lee

Se-hyoung Ahn

Young-Lim Park

Hyun-jun Kim

Su-hwan Kim

Seong-yul Park

A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.

Semiconductor device and method of manufacturing the same

In a capacitor of an integrated circuit, a crystallization induction film is obtained by oxidizing a surface of an electrode, and a dielectric structure is formed on the crystallization induction film, to reduce defect density generated in the dielectric film, improve leakage current, and reduce equivalent oxide thickness.

Integrated circuit device and method of fabricating the same

Growing community of inventors

Seoul, South Korea

Jae-wan Chang