Samsung Display Co., Ltd.

Samsung Electronics Co., Ltd.

Industry-university Cooperation Foundation Hanyang University

Skhynix Inc.

Toshiba Samsung Storage Technology Korea Corporation

Korea Institute of Radiological & Medical Sciences

Institute for Advanced Engineering

Techno Semichem Co., Ltd.

Jae-Sung Kim

Hoon Jong Kang

Yang-Ho Jung

Jin-Young Choi

Hi-Kuk Lee

Jin-Ho Ju

Chul-Su Yang

Young-Soo Sohn

Shi-Yul Kim

Koichi Sugitani

Yong-Hwan Shin

Byung-Uk Kim

Ki-Hyun Cho

Hyoc-Min Youn

Hong-Jo Park

Joo-Pyo Yun

Sang-Soo Kim

Woo-Geun Lee

Dong-Min Kim

Jong-Pil Son

Jin Ho Ju

Dae-hyun Kim

Uk-Song Kang

Young-Je Cho

Woo-Jin Lee

Jong-In Kim

Dong-Ki Lee

Jae-Hyoung Youn

Jean-Ho Song

Cha-Dong Kim

Jung-In Park

Yun-Seok Lee

Woo-Seok Jeon

Doo-Hee Jung

Jong-cheol Kim

YoungJe Cho

Sang-Yun Kim

Yasuhiro Kameyama

Hee-deuk Park

Cheon-Jae Maeng

Hoon Chul Kang

Ki-Hyuk Koo

Eun Jeagal

Seung-Ki Kim

Kun-Young Lee

Sang-woo Ha

Tae-hee Song

Shin-min Rhee

Ki Joo Kim

Jong Won Rhie

Young-hyo Eun

Ki-Young Park

Ju-hyun Song

In-je Sung

Byeong-Ju Jin

Jeong-Seob Kye

Tae-Kyum Kim

Do-kun Yoon

Sang-Gu Hwang

Young-Hoon Han

Kyoung-Don Lee

Myung-do Oh

Tae-Suk Suh

Yuuji Mizuho

Se-Jin Choi

Sang-Gak Choi

The present disclosure is the first to identify a host cell protein and its function with which MPT63 and MPT64, secreted antigens of, interact, and to construct a recombinant MPT protein including each domain of MPT63 and MPT64 interacting with the host cell protein, and the recombinant MPT protein may be applied to a use for the prevention and treatment of tuberculosis by confirming that the recombinant MPT protein targets the-infected macrophages and increases the ROS level and inflammatory cytokine expression in macrophages, thereby inducing the death of. And MPT protein of the present disclosure can improve the vaccine effect by the BCG vaccine so that it can be used as a tuberculosis vaccine and/or vaccine adjuvant either alone or together with known tuberculosis vaccines.

Recombinant MPT protein derived from MPT63 and MPT64 and use thereof

The present invention relates to a pharmaceutical composition and a health functional food composition for preventing, alleviating or treating inflammatory diseases, includingGRA9 protein or a gene encoding the protein as an active ingredient. The present inventors have identified the C-terminal region essential for the NLRP3-mediated mechanism of action and function ofGRA9 in macrophages, which are host immune cells and confirmed the substantial anti-inflammatory and antibacterial effects and the antiseptic effect in vivo. Accordingly,GRA9 protein or a gene encoding the protein is expected to be usefully utilized in the field of prevention or treatment of inflammatory diseases caused by an abnormal NLRP3-mediated inflammatory response, including sepsis.

Pharmaceutical composition for preventing or treating inflammatory diseases includingGRA9 protein or gene encoding the protein as active ingredient

The present invention relates to a novelGRA8-derived recombinant peptide, and a pharmaceutical composition and functional food for preventing or treating cancer, which includes the same as an active ingredient. TheGRA8-derived recombinant peptide according to the present invention is a novel recombinant peptide in which a specific mitochondrial targeting sequence and an ATP5A1/SIRT3 sequence of GRA8 are conjugated to an acidity-triggered rational membrane (ATRAM), and has considerably improved efficacy in which an inhibitory concentration 50 (IC50) is improved up to 200-fold (in vitro) or 500-fold (in vivo), compared with a conventional GRA8-derived peptide (rGRA8). In addition, since the peptide treatment shows a notably distinct therapeutic effect in mouse models with cancer, the peptide may be effectively used in a pharmaceutical composition or functional food for preventing or treating cancer.

GRA8-derived recombinant peptides and composition for preventing or treating cancer comprising the same

There is provided a scaffold for bone regeneration which is adapted to be implanted at a bone defect site of a bone. The scaffold comprises a main support member configured to be fixed to the bone, and a load supporting unit configured to be installed in the bone defect site of the bone to selectively bear a load applied to the bone. The load supporting unit includes one or two supporting pieces to be installed in the bone defect site of the bone to selectively bear a load applied to the bone. The supporting piece has at one end portion a contact portion to be brought into contact with and fixed to a compact bone in the bone defect site of the bone. The other end portion of the supporting piece is selectively coupled to the main support member.

Scaffold for bone regeneration

Provided is a light emitting diode (LED) module. The LED module includes: a light emitting chip on a substrate; and an optical lens on the substrate configured to envelop the light emitting chip, wherein the optical lens includes a body comprising a groove receiving the light emitting chip therein and having a dome-shaped upper surface and a ring-shaped supporting portion protruding from a lower surface of the body.

Light emitting diode module

A method for manufacturing a semiconductor structure includes preparing a semiconductor substrate which includes a memory cell region and a peripheral circuit region; forming a buried word line in the semiconductor substrate in the memory cell region; forming a bit line structure over the semiconductor substrate in the memory cell region; forming a dielectric layer in the peripheral circuit region and the memory cell region; forming a first opening in the dielectric layer in the memory cell region; filling a silicon filler in the first opening; forming a second opening in the dielectric layer in the peripheral circuit region; forming a sidewall spacer over a sidewall of the second opening; recessing the silicon filler to form a silicon plug, wherein the silicon plug fills a lower portion of the first opening; and forming a first metal silicide over a top surface of the silicon plug, and concurrently forming a second metal silicide in a lower portion of the second opening.

Semiconductor structure and method for manufacturing the same

Disclosed are increased expression of ERp57, ERp57-STAT3 complex, and ERp57-STAT3-Mcl-1 in laryngeal cancer, especially in radioresistant laryngeal cancer and their regulations on radioresistance of laryngeal cancer. As such, the efficacy of radiotherapy can be enhanced by diagnosing prognosis in laryngeal cancer and radioresistance of laryngeal cancer. Furthermore, provided are a method of screening a therapeutic agent for laryngeal cancer including selecting a candidate drug that inhibits the expression of ERp57 or inactivates ERp57, and a therapeutic method for inhibiting or treating laryngeal cancer or radioresistant laryngeal cancer, thereby being useful in the treatment of laryngeal cancer.

In vitro method of inhibiting the growth of radioresistant laryngeal cancer cells

A thin film transistor substrate is provided. The thin film transistor substrate includes a display area including a plurality of pixels, wherein the pixels are connected to gate lines and data lines, a gate driver connected to the gate lines, a plurality of data pads connected to the data lines, a plurality of dummy pattern parts formed of a same layer as the gate lines, and a non-display area in which the gate driver, data pads, and dummy pattern parts are disposed, and the dummy pattern parts are disposed in an area within the non-display area where the gate driver is not disposed, and one of the dummy pattern parts is disposed overlapping with the data pads.

Thin film transistor substrate, method of manufacturing the same and display device having the same

A method of manufacturing a display apparatus and a display apparatus manufactured by using (utilizing) the method.

Resin composition, method of manufacturing display apparatus by using the same, and display apparatus manufactured by using the method

A method of forming a metal pattern is disclosed. In the method, a metal layer is formed on a base substrate. A photoresist composition is coated on the metal layer to form a coating layer. The photoresist composition includes a binder resin, a photo-sensitizer and a mixed solvent including a first solvent, a second solvent having a higher volatility than the first solvent, and a third solvent having a higher volatility than the second solvent. The coating layer is exposed to light. The coating layer is partially removed to form a photoresist pattern. The metal layer is patterned by using the photoresist pattern as a mask.

Photoresist composition and method for forming a metal pattern

A photosensitive resin composition is disclosed. The disclosed photosensitive resin composition includes an acryl-based copolymer formed by copolymerizing i) unsaturated carboxylic acid, unsaturated carboxylic acid anhydride, or a mixture thereof, and ii) an olefin-based unsaturated compound or a mixture thereof, a dissolution inhibitor in which a phenolic hydroxyl group is protected by an acid-degradable acetal or ketal group, a photoacid generator, and a solvent.

Photosensitive resin composition, method of forming pattern, and liquid crystal display using the same

A refresh address generator may include a lookup table including a first portion storing a first group of addresses associated with a first data retention time, and a second portion storing a second group of addresses associated with a second data retention time different from the first data retention time, wherein the addresses of the first portion are more frequently accessed than the addresses of the second portion to refresh the memory cells corresponding to the addresses. Systems and methods may also implement such refresh address generation.

Devices, systems and methods with improved refresh address generation

A thin film transistor array panel includes: an substrate; a gate line and a gate pad portion disposed on the substrate; a gate insulating layer disposed on the gate line and the gate pad portion; a data line and a data pad portion disposed on the gate insulating layer; a gate assistance pad portion disposed at a position corresponding to the gate pad portion; a first insulating layer disposed on the data line and removed at the gate pad portion and the data pad portion; a first field generating electrode disposed on the first insulating layer; a second insulating layer disposed on the first field generating electrode and removed at the gate pad portion and the data pad portion; and a second field generating electrode disposed on the second insulating layer. The assistance gate pad portion and the gate insulating layer include a contact hole exposing the gate pad portion.

Thin film transistor array panel and manufacturing method thereof

A display panel includes a base substrate having a plurality of pixel areas, in which each pixel area includes a plurality of sub-pixel areas, a light blocking layer pattern generally defining the sub-pixel areas, and a plurality of color filter patterns. Upper surfaces of the light blocking layer pattern and the plurality of color filter patterns collectively form a generally flat surface.

Display substrate, method of manufacturing the same, and display panel having the same

A repair control circuit of controlling a repair operation of a semiconductor memory device includes a row matching block and a column matching block. The row matching block stores fail group information indicating one or more fail row groups among a plurality of row groups. The row groups are determined by grouping a plurality of row addresses corresponding to a plurality of wordlines. The row matching block generates a group match signal based on input row address and the fail group information, such that the group match signal indicates the fail row group including the input row address. The column matching block stores fail column addresses of the fail memory cells, and generates a repair control signal based on input column address, the group match signal and the fail column addresses, such that the repair control signal indicates whether the repair operation is executed or not.

Repair control circuit and semiconductor memory device including the same

Growing community of inventors

Yongin-si, South Korea

Jae-Sung Kim