Samsung Electronics Co., Ltd.

Jae-sung Hyun

Tan Sakong

Jung-kyu Park

Dong-yul Lee

Byoung-kyun Kim

Jin-young Lim

A light-emitting device includes a light-emitting structure including a first-conductivity-type nitride semiconductor layer on a substrate, an active layer on the first-conductivity-type nitride semiconductor layer, and a second-conductivity-type nitride semiconductor layer on the active layer, and a buffer layer between the substrate and the light-emitting structure. The buffer layer includes a plurality of voids. The plurality of voids extend vertically into the buffer layer from a surface of the buffer layer. The surface of the buffer layer is proximate to the light-emitting structure. The plurality of voids have different horizontal sectional areas.

Light-emitting devices and methods of manufacturing the same

A light-emitting device that may be manufactured includes an n-type semiconductor layer including a first dopant on a substrate, an active layer on the n-type semiconductor layer, and a p-type semiconductor layer including a second dopant on the active layer. The light-emitting device may be formed according to at least one of a first layering process and a second layering process. The first layering process may include implanting the first dopant into the n-type semiconductor layer into the n-type semiconductor layer according to an ion-implantation process, and the second layering process may include implanting the second dopant into the p-type semiconductor layer according to an ion-implantation process. Forming a semiconductor layer that includes an ion-implanted dopant may include thermally annealing the semiconductor layer subsequent to the ion implantation. The p-type semiconductor layer may include magnesium-hydrogen (Mg&#x2014;H) complexes at a concentration of about 1&#xd7;10atoms/cmto about 1&#xd7;10atoms/cm.

Growing community of inventors

Suwon-si, South Korea

Jae-sung Hyun