Samsung Electronics Co., Ltd.

Jae Sung Hur

Tae Yon Lee

Jin Gyun Kim

Chang Hwa Kim

Sang-Su Park

Kook Tae Kim

Beom Suk Lee

Kwan Sik Kim

In Gyu Baek

Sang Hoon Uhm

Ha Jin Lim

Hong Ki Kim

Taek Soo Jeon

Young Bin Lee

Soo Jin Hong

Jin Hyung Kim

An image sensor may include a substrate including first and second surfaces opposite each other, a plurality of photoelectric conversion devices isolated from direct contact with each other within the substrate, a first trench configured to extend into an interior of the substrate from the first surface of the substrate and between adjacent photoelectric conversion devices of the plurality of photoelectric conversion devices, a first supporter within the first trench, and a first isolation layer at least partially covering both sidewalls of the first supporter within the first trench, wherein a lower surface of the first supporter is coplanar with the first surface of the substrate.

Image sensors including photoelectric conversion devices, trench, supporter, and isolation layer

An image sensor includes a substrate having a photoelectric conversion element therein, a first insulating layer on the substrate, a contact penetrating through the first insulating layer, a color filter on at least one side of the contact, and a moisture absorption prevention layer in contact with a sidewall of the contact and extending on an upper surface of the color filter.

Image sensor

An image sensor configured to provide improved reliability may include a charge passivation layer that includes a multiple different elements, each element of the different elements being a metal element or a metalloid element. The different elements may include a first element of a first group of periodic table elements and a second element of a second, different group of periodic table elements. The charge passivation layer may include an amorphous crystal structure.

Image sensors and methods of fabricating the same

Growing community of inventors

Yongin-si, South Korea

Jae Sung Hur